SIDC56D170E6

Emitter Controlled-Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled-Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled-Diode is optimized for Infineon IGBT technology.

ParametricSIDC56D170E6
TechnologyEmitter Controlled Diode
VDS  max1700.0V
IF  max75.0A
I(FSM)  max150.0A
VF2.15V
IR  max375.0µA
Irrm55.0A
Sales Product NameSIDC56D170E6
OPNSIDC56D170E6X1SA1
Product Statusactive and preferred
Package Name--
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size1
Packing TypeWAFER SAWN
Summary of Features:
  • Soft, fast switching
  • Low reverse recovery charge
  • Small temperature coefficient
Target Applications:
  • SMPS
  • Industrial drives
  • Resonant applications
Data Sheet
TitleSizeDateVersion
SIDC56D170E6_L4251N,EN56 KB29 Jul 200801_02
EN SIDC56D170E6