A new SMD package using Kelvin source concept Infineon's new 650V CoolMOS™ C7 Gold (G7) technology in latest surface mount device (SMD) TO-Leadless (TOLL) package brings together for the first time the benefits of the improved 650V CoolMOS™ C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TOLL package. This enables as SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW.
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Need a small MOSFET to handle 300A? The innovative package for your high current applications with a 30% footprint reduction whilst eliminating electromigration.
High current applications such as Power Tools, Light Electric Vehicles and Fork Lifts often result in MOSFETs being used in parallel, driving up board space and cost - not any longer. Infineon’s TO-Leadless MOSFET package is optimized to handle currents of up to 300A, increasing power density with a substantial reduction in footprint. A footprint reduction of 30% compared to D 2PAK, together with a height reduction of 50%, results in an overall space saving of 60% enabling much more compact designs.
The problem of electromigration is a challenge in high power and high temperature applications as well. Here again TO-Leadless is the ideal package solution. A 50% bigger solder contact area avoids electromigration leading to improvement in reliability. Infineon now offers five voltage classes for OptiMOS™ in TO-Leadless ranging from 30V to 150V.
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Package | Product type | V DS [V] | R DS(on) max [mΩ] |
---|---|---|---|
TO-Leadless | IPT65R195G7 | 650 | 195 |
TO-Leadless | IPT65R105G7 | 650 | 105 |
TO-Leadless | IPT65R033G7 | 650 | 33 |
Package | Product type | V DS [V] | R DS(on) max [mΩ] |
---|---|---|---|
TO-Leadless | IPT004N03L | 30 | 0.4 |
TO-Leadless | IPT007N06N | 60 | 0.7 |
TO-Leadless | IPT012N08N5 | 80 | 1.2 |
TO-Leadless | IPT020N10N3 | 100 | 2.0 |
TO-Leadless | IPT015N10N5 | 100 | 1.5 |
TO-Leadless | IPT059N15N3 | 150 | 5.9 |
TO-Leadless | IPT111N20NFD | 200 | 11.1 |
TO-Leadless | IPT210N25NFD | 250 | 21.0 |
Title | Size | Date | Version |
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NEW! Power Management Selection Guide 2016;EN | 4.7 MB | 22 Feb 2016 | 00_00 |
Title | Size | Date | Version |
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Product Brief 650V CoolMOS™ C7 Gold in TO-Leadless;EN | 305 KB | 09 May 2016 | 01_00 |
Product Brief TO-Leadless Package;EN | 312 KB | 13 Apr 2014 | 01_00 |
Title | Size | Date | Version |
---|---|---|---|
Product Presentation TO-Leadless Package - Optimized for high current applications | 1.6 MB | 08 May 2013 | |
Presentation - OptiMOS™ the perfect fit for your battery powered application | 2.2 MB | 20 May 2014 |
Title | Size | Date | Version |
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Application Brochure - Infineon Solutions for Transportation;EN | 6.9 MB | 01 Jun 2013 | 00_00 |
Solutions for Solar Energy Systems;EN | 1.9 MB | 26 Jun 2014 | 01_00 |
Application Brochure Battery Powered Applications;EN | 2.1 MB | 27 Feb 2014 | 01_00 |
Title | Size | Date | Version |
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Application Note Introduction to Infineons Power MOSFET Simulation Models;EN | 701 KB | 30 Nov 2015 | 01_00 |
Application Note TO-Leadless Package | 899 KB | 13 May 2013 | |
Application Note 650V CoolMOS™ C7 Gold in TO-Leadless;EN | 2.5 MB | 10 Jun 2016 | 01_01 |
Application Note OptiMOS™ Datasheet Explanation;EN | 663 KB | 01 Dec 2012 | |
Application Note Evaluation Board 5kW TO-Leadless | 654 KB | 17 Sep 2013 | |
Application Note Introduction to Infineon`s Simulation Models for Power MOSFETs | 701 KB | 06 Mar 2014 |
Title | Size | Date | Version |
---|---|---|---|
Advertisement Cordless Power Tools;EN | 369 KB | 21 Mar 2014 | |
Press Release TO-Leadless Package English;EN | 219 KB | 14 May 2013 | |
Press Release TO-Leadless Package German;DE | 226 KB | 14 May 2013 | |
Advertisement TO-Leadless Package English;EN | 392 KB | 04 Oct 2013 | |
Advertisement TO-Leadless Package German;DE | 389 KB | 04 Oct 2013 |
Title | Size | Date | Version |
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Article Electronic Specifier TO-Leadless MOSFET Package;EN | 699 KB | 10 Jun 2015 | 01_00 |
Title | Size | Date | Version |
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Simulation Model OptiMOS™ Power MOSFET PSpice 60V N-Channel;EN | 1.1 MB | 28 Aug 2015 | 01_00 |