The HI5860 is a 12-bit, 130MSPS (Mega Samples Per Second), high speed, low power, D/A converter which is implemented in an advanced CMOS process. Operating from a single +3V to +5V supply, the converter provides 20mA of full scale output current and includes edge-triggered CMOS input data latches. Low glitch energy and excellent frequency domain performance are achieved using a segmented current source architecture.
This device complements the HI5x60 and HI5x28 family of high speed converters, which includes 8-, 10-, 12-, and 14-bit devices.
Key Features
- Throughput Rate 130MSPS
- Low Power 175mW at 5V, 32mW at 3V (At 100MSPS)
- Integral Linearity Error (Typ) ±0.5 LSB
- Adjustable Full Scale Output Current 2mA to 20mA
- Internal 1.2V Bandgap Voltage Reference
- Single Power Supply from +5V to +3V
- Power-Down Mode
- CMOS Compatible Inputs
- Excellent Spurious Free Dynamic Range (76dBc, fS = 50MSPS, fOUT = 2.51MHz)
- Excellent Multitone Intermodulation Distortion
- Pb-Free Available (RoHS Compliant)
Applications
- Basestations (Cellular, WLL)
- Medical/Test Instrumentation
- Wireless Communications Systems
- Direct Digital Frequency Synthesis
- Signal Reconstruction
- High Resolution Imaging Systems
- Arbitrary Waveform Generators
Datasheets| Title | Type | Updated | Size | Other Languages |
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| HI5860 Datasheet | PDF | 14 Nov 2014 | 678 KB | |
Order Information| Part Number | Package Type | Weight(g) | Pins | MSL Rating | Peak Temp (°C) | RoHS Status |
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| HI5860IA | 28 Ld TSSOP | 0.107 | 28 | | 240 | |
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| HI5860IA-T | 28 Ld TSSOP T+R | 0.107 | 28 | 1 | 240 | |
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| HI5860IB | 28 Ld SOIC | 0.75 | 28 | 1 | 240 | |
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| HI5860IBZ | 28 Ld SOIC | 0.75 | 28 | 3 | 260 | RoHS |
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| HI5860IBZ-T | 28 Ld SOIC T+R | 0.75 | 28 | 3 | 260 | RoHS |
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| HI5860SOICEVAL1 | | | | N/A | | |
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