• 简体中文
• English

The ISL70219ASEH is a very high precision amplifier featuring the perfect combination of low noise vs power consumption. Low offset voltage, low I_BIAS current, and low temperature drift make it the ideal choice for applications requiring both high DC accuracy and AC performance. The combination of high precision, low noise, low power, and a small footprint provides the user with outstanding value and flexibility relative to similar competitive parts.

Applications for these amplifiers include precision active filters, medical and analytical instrumentation, precision power supply controls, and industrial controls.

The ISL70219ASEH is offered in a 10 lead hermetic ceramic flatpack. The device is packaged in industry standard pin configurations and operate across the extended temperature range from -55°C to +125°C.

Key Features

• Electrically screened to DLA SMD# 5962-14226
• Low input offset voltage: ±110μV, maximum
• Superb offset temperature coefficient: 1μV/°C, maximum
• Input bias current: ±15nA, maximum
• Input bias current TC: ±5pA/°C, maximum
• Low current consumption: 440μA
• Voltage noise: 8nV/√Hz
• Wide supply range: 4.5V to 36V
• Operating temperature range: -55°C to +125°C
• Radiation environment
  • SEB LETTH (VS = ±18V): 86.4MeV•cm2/mg
  • SET recovery time: ≤10μs at 60MeV•cm2/m
  • SEL immune (SOI process)
  • Total dose HDR (50 to 300rad(Si)/s): 300krad(Si)
  • Total dose LDR (10mrad(Si)/s): 100krad(Si)** Product capability established by initial characterization. The EH version is acceptance tested on a wafer-by-wafer basis to 50krad(Si) at low dose rate.

Applications

• Precision instrumentation
• Spectral analysis equipment
• Active filter blocks, thermocouples and RTD reference buffers
• Data acquisition and power supply control