ISL95808: High Voltage Synchronous Rectified Buck MOSFET Driver

The ISL95808 is a high frequency, dual MOSFET driver with low shutdown current, optimized to drive two N-Channel power MOSFETs in a synchronous-rectified buck converter topology. It is especially suited for mobile computing applications that require high efficiency and excellent thermal performance. The driver, combined with an Intersil multiphase Buck PWM controller, forms a complete single-stage core-voltage regulator solution for advanced mobile microprocessors.

The ISL95808 features a 4A typical sinking current for the lower gate driver. This current is capable of holding the lower MOSFET gate off during the rising edge of the phase node. This prevents shoot-through power loss caused by the high dv/dt of phase voltages. The operating voltage matches the 30V breakdown voltage of the MOSFETs commonly used in mobile computer power supplies.

The ISL95808 also features a three-state PWM input. This PWM input, working together with Intersil’s multiphase PWM controllers, will prevent negative voltage output during CPU shutdown. This feature eliminates a protective Schottky diode usually seen in microprocessor power systems.

MOSFET gates can be efficiently switched up to 2MHz using the ISL95808. Each driver is capable of driving a 3000pF load with propagation delays of 8ns and transition times under 10ns. Bootstrapping is implemented with an internal Schottky diode. This reduces system cost and complexity, while allowing for the use of higher performance MOSFETs. Adaptive shoot--through protection is integrated to prevent both MOSFETs from conducting simultaneously.

A diode emulation feature is integrated in the ISL95808 to enhance converter efficiency at light load conditions. This feature also allows for monotonic start-up into prebiased outputs. When diode emulation is enabled, the driver will allow discontinuous conduction mode by detecting when the inductor current reaches zero and subsequently turning off the low-side MOSFET gate.

The ISL95808 also features very low shutdown supply current (5V, 3μA) to ensure the low power consumption.

Key Features
  • Dual MOSFET drivers for synchronous rectified bridge
  • Adaptive shoot-through protection
  • 0.5Ω ON-resistance and 4A sink current capability
  • Supports high switching frequency up to 2MHz
    • Fast output rise and fall time
    • Low propagation delay
  • Three-state PWM input for power stage shutdown
  • Internal bootstrap Schottky diode
  • Low shutdown supply current (5V, 3μA)
  • Diode emulation for enhanced light-load efficiency and prebiased start-up applications
  • VCC POR (Power-On Reset) feature integrated
  • Low three-state shutdown hold-off time (typical 160ns)
  • DFN package
  • Pb-free (RoHS compliant)
Applications
  • Core voltage supplies for Intel® and AMD™ mobile microprocessors
  • High frequency low profile DC/DC converters
  • High current low output voltage DC/DC converters
  • High input voltage DC/DC converters
Typical Diagram
Application Notes
TitleTypeUpdatedSizeOther Languages
AN1116: Elantec CMOS applicationsPDF13 Nov 2014231 KB
Datasheets
TitleTypeUpdatedSizeOther Languages
ISL95808 DatasheetPDF25 May 2016288 KB
Tech Briefs
TitleTypeUpdatedSizeOther Languages
TB447: Guidelines for Preventing Boot-to-Phase Stress on Half-Bridge MOSFET Driver ICsPDF19 Nov 2014137 KB
TB389: PCB Land Pattern and Surface Mount Guidelines for QFN PackagesPDF19 Nov 2014661 KB
White Papers
TitleTypeUpdatedSizeOther Languages
Five Easy Steps to Create a Multi-Load Power SolutionPDF30 Jan 2017502 KB
Order Information
Part NumberPackage TypeWeight(g)PinsMSL RatingPeak Temp (°C)RoHS Status
ISL95808HRZ-T8 Ld DFN T+R0.01181260RoHS
ISL95808IRZ-T8 Ld DFN T+R0.01181260RoHS
ISL95808 Datasheet 25 May 2016
AN1116: Elantec CMOS applications 13 Nov 2014
TB447: Guidelines for Preventing Boot-to-Phase Stress on Half-Bridge MOSFET Driver ICs 19 Nov 2014
TB389: PCB Land Pattern and Surface Mount Guidelines for QFN Packages 19 Nov 2014
Five Easy Steps to Create a Multi-Load Power Solution 30 Jan 2017