LFUSCD10065A Series - 650 V, 10 A, TO-220 2-lead
DataSheet:Littelfuse Power Semiconductors LFUSCD10065A Datasheet
The LFUSCD series of silicon carbide (SiC) Schottky diodes has near-zero reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.The diode series is ideal for applications where improvements in efficiency, reliability, and thermal management are desired.
Features:
- Positive temperature coefficient for safe operation and ease of paralleling
- 175 °C maximum operating junction temperature
- Enhanced surge capability
- Extremely fast, temperature-independent switching behavior
- Dramatically reduced switching losses compared to Si bipolar diodes
Applications:
- Boost diodes in power factor correction
- Switch-mode power supplies
- Uninterruptible power supplies
- Solar inverters
- Industrial motor drives
Ordering Information
| Catalog # | VRRM(V) | Forward Voltage Drop VF (V) | Reverse Current IR (µA) | Peak Forward Surge Current IFSM (A) | QC (nC) | Package Type | TJ Max (°C) | Configuration | IF(AV) | Size |
|---|---|---|---|---|---|---|---|---|---|---|
| LFUSCD10065A | 650 | 1.5 | 250 | 75 | 16 | TO220-2L | 175 | Single | 10 | TO220-2L |
