AFT05MS006N: 136-941 MHz, 6.0 W, 7.5 V Wideband RF Power LDMOS Transistor

PLD-1.5W Image
特性
  • Characterized for Operation from 136 to 941 MHz
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Integrated ESD Protection
  • Integrated Stability Enhancements
  • Wideband — Full Power Across the Band
  • Exceptional Thermal Performance
  • Extreme Ruggedness
  • High Linearity for: TETRA, SSB
  • RoHS Compliant
  • In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 7-inch Reel.
特性
  • Output Stage VHF Band Handheld Radio
  • Output Stage UHF Band Handheld Radio
  • Output Stage for 700-800 MHz Handheld Radio
Data Sheets (1)
Name/DescriptionModified Date
AFT05MS006NT1 136-941 MHz, 6.0 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet (REV 0) PDF (934.8 kB) AFT05MS006N24 Feb 2014
Application Notes (2)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (1)
Name/DescriptionModified Date
98ASA00476D, PLD, 6.6x5.84x1.74, Pitch 4.6, 3 Pins (REV A) PDF (55.3 kB) 98ASA00476D15 Feb 2016
Supporting Information (1)
Name/DescriptionModified Date
Airfast® Mobile Radio Solutions (REV 0) PDF (907.1 kB) AIRFAST_MOBILE_RADIO_TRN_SI12 Mar 2014
Printed Circuit Boards
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
AFT05MS006NT1Active1369417.537.866 @ CWCW18.3 @ 520731UnmatchedABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
PLD-1.5W98ASA00476DMPQ - 1000 REELPOQ - 1000 REELActiveAFT05MS006NT1AFT05MS006NT1.pdf3260
AFT05MS006NT1 136-941 MHz, 6.0 W, 7.5 V Wideband RF Power LDMOS Transistor - Data Sheet aft05ms006n
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
Airfast® Mobile Radio Solutions aft05ms006n
AFT05MS006N 520 MHz Narrowband PCB DXF file AFT05MS006N
AFT05MS006N 760-870 MHz Broadband PCB DXF file AFT05MS006N
98ASA00476D, PLD, 6.6x5.84x1.74, Pitch 4.6, 3 Pins aft09ms015n
AFT05MS006NT1.pdf AFT05MS006N