BGU8H1UK: SiGe:C Low Noise Amplifier MMIC for LTE

The BGU8H1UK is a Low Noise Amplifier (LNA) for LTE receiver applications. It comes as an extremely small and thin Wafer Level Chip Scale Package (WLCSP). The BGU8H1UK requires one external matching inductor.

The BGU8H1UK adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance. At low jamming power levels it delivers 16 dB gain at a noise figure of 0.9 dB. During high power levels, it temporarily increases its bias current to improve sensitivity.

The BGU8H1UK is optimized for 2300 MHz to 2690 MHz.

Data Sheets (1)
Name/DescriptionModified Date
SiGe:C Low Noise Amplifier MMIC for LTE (REV 1.0) PDF (200.0 kB) BGU8H1UK19 May 2015
Application Notes (1)
Name/DescriptionModified Date
BGU8H1UK LTE LNA evaluation board (REV 2.0) PDF (721.0 kB) AN1159424 Nov 2015
S-Parameters
Ordering Information
ProductStatusPackage version@VCC [min] (V)@VCC [max] (V)@ICC [typ] (mA)Gp [typ] (dB)NF [typ] (dB)Pi(1dB) [min] (dBm)IP3i [min] (dBm)IP3i [typ] (dBm)@VCC (V)Pi(1dB) [typ] (dBm)@f (MHz)
BGU8H1UKActiveNAU0001.53.1160.9-52350
Package Information
Product IDPackage DescriptionOutline VersionReflow/Wave SolderingPackingProduct StatusPart NumberOrdering code(12NC)MarkingChemical ContentRoHS / Pb Free / RHFLeadFree Conversion DateMSLMSL LF
BGU8H1UKReel 13" Q1/T1 in DrypackActiveBGU8H1UKAZ (9340 690 52019)Standard MarkingBGU8H1UKAlways Pb-free11
SiGe:C Low Noise Amplifier MMIC for LTE BGU8H1UK
BGU8H1UK LTE LNA evaluation board BGU8H1UK
BGU8H1UK S-parameter and Noise BGU8H1UK