BLF573:HF/VHF功率LDMOS晶体管

300 W LDMOS RF功率晶体管,适用于HF至500 MHz频段广播应用以及工业、科学和医疗应用。

特性和优势
    • 方便的功率控制
    • 集成ESD保护
    • 极佳的强度
    • 高效率
    • 极佳的热稳定性
    • 主要用于宽带操作(HF和VHF波段)
    • 符合有害物质限制的Directive 2002/95/EC
应用
    • 工业、科学和医疗应用
    • 广播发射器应用
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range10500MHz
PL(1dB)nominal output power at 1 dB gain compression300W
Gppower gainPL = 300 W; VDS = 50 V2627.228.4dB
RLininput return lossPL = 300 W; VDS = 50 V; IDq = 900 mA-13-10dB
ηDdrain efficiencyPL = 300 W; VDS = 50 V; f = 225 MHz; IDq = 900 mA6770%
PLoutput power300W
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF573

(SOT502A)
sot502a_poBulk Pack量产Standard MarkingBLF573,112( 9340 644 45112 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1Ddrain
2Ggate
3Ssouce
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF573BLF573,112Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF573_BLF573S (中文)HF / VHF power LDMOS transistorData sheetpdf2010-07-08
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
PCB_Design_BLF573_BLF573S_Data-sheetPCB Design BLF573(S) (Data sheet)Design supportzip2012-02-24
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLF573_ADS-2009_ModelBLF573 ADS-2009 ModelSimulation modelzip2013-06-20
NXP_RFpower_Lib_V09p0RF Power Model Library for Microwave Office®Simulation modelzip2014-11-11
NXP_RFpower_Manual_MWO_20141111RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation modelpdf2014-11-11
NXP_RFPower_Simulation_ExampleRF Power Simulation Example for Microwave Office®Simulation modelzip2012-06-11
sot502a_poflanged ceramic package; 2 mounting holes; 2 leadsOutline drawingpdf2009-10-08
SOT502A_112CDFM2; blister pack; standard product orientation 12NC ending 112Packingpdf2012-11-30
订购信息
型号订购码 (12NC)可订购的器件编号
BLF5739340 644 45112BLF573,112
模型
标题类型日期
BLF573 ADS-2009 ModelSimulation model2013-06-20
RF Power Model Library for Microwave Office®Simulation model2014-11-11
RF Power Model Library Manual and Installation Instructions for Microwave Office®Simulation model2014-11-11
RF Power Simulation Example for Microwave Office®Simulation model2012-06-11
其它
标题类型日期
PCB Design BLF573(S) (Data sheet)Design support2012-02-24
HF / VHF power LDMOS transistor BLF573_S
HF / VHF power LDMOS transistor BLF573_S
HF / VHF power LDMOS transistor BLF573_S
Mounting and Soldering of RF transistors aerospace_defense
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
flanged ceramic package; 2 mounting holes; 2 leads BLS7G2325L-105
CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G2325L-105
BLF573 ADS-2009 Model BLF573_S
RF Power Model Library for Microwave Office® CLF1G0060_S_30
RF Power Model Library Manual and Installation Instructions for Microwave Office® CLF1G0060_S_30
RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
PCB Design BLF573(S) (Data sheet) BLF573_S