BLF573：HF/VHF功率LDMOS晶体管
300 W LDMOS RF功率晶体管，适用于HF至500 MHz频段广播应用以及工业、科学和医疗应用。
特性和优势
应用
| 产品图片 |
关键参数
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 10 | 500 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 300 | W | |||
| Gp | power gain | PL = 300 W; VDS = 50 V | 26 | 27.2 | 28.4 | dB |
| RLin | input return loss | PL = 300 W; VDS = 50 V; IDq = 900 mA | -13 | -10 | dB | |
| ηD | drain efficiency | PL = 300 W; VDS = 50 V; f = 225 MHz; IDq = 900 mA | 67 | 70 | % | |
| PL | output power | 300 | W |
封装与包装
| 型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 可订购的器件编号, (订购码 (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF573 |  (SOT502A) | sot502a_po | Bulk Pack | 量产 | Standard Marking | BLF573,112( 9340 644 45112 ) |
引脚配置信息
| Pin | Symbol | Description | 外形简图 | 图形符号 |
|---|---|---|---|---|
| 1 | D | drain |  |  |
| 2 | G | gate | ||
| 3 | S | souce |
无铅环保信息
| 型号 | 可订购的器件编号 | RoHS / RHF | 无铅转换日期 | 潮湿敏感度等级 | MSL LF |
|---|---|---|---|---|---|
| BLF573 | BLF573,112 |   | Always Pb-free | NA | NA |
文档资料
| 档案名称 | 标题 | 类型 | 格式 | 日期 |
|---|---|---|---|---|
| BLF573_BLF573S (中文) | HF / VHF power LDMOS transistor | Data sheet | 2010-07-08 | |
| AN10896 | Mounting and Soldering of RF transistors | Application note | 2015-03-24 | |
| PCB_Design_BLF573_BLF573S_Data-sheet | PCB Design BLF573(S) (Data sheet) | Design support | zip | 2012-02-24 |
| fatigue_in_aluminum_bond_wires | Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| NXP_RF_manual_19th_edition | RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 | Other type | 2015-05-19 | |
| BLF573_ADS-2009_Model | BLF573 ADS-2009 Model | Simulation model | zip | 2013-06-20 |
| NXP_RFpower_Lib_V09p0 | RF Power Model Library for Microwave Office® | Simulation model | zip | 2014-11-11 |
| NXP_RFpower_Manual_MWO_20141111 | RF Power Model Library Manual and Installation Instructions for Microwave Office® | Simulation model | 2014-11-11 | |
| NXP_RFPower_Simulation_Example | RF Power Simulation Example for Microwave Office® | Simulation model | zip | 2012-06-11 |
| sot502a_po | flanged ceramic package; 2 mounting holes; 2 leads | Outline drawing | 2009-10-08 | |
| SOT502A_112 | CDFM2; blister pack; standard product orientation 12NC ending 112 | Packing | 2012-11-30 |
订购信息
| 型号 | 订购码 (12NC) | 可订购的器件编号 |
|---|---|---|
| BLF573 | 9340 644 45112 | BLF573,112 |
模型
| 标题 | 类型 | 日期 |
|---|---|---|
| BLF573 ADS-2009 Model | Simulation model | 2013-06-20 |
| RF Power Model Library for Microwave Office® | Simulation model | 2014-11-11 |
| RF Power Model Library Manual and Installation Instructions for Microwave Office® | Simulation model | 2014-11-11 |
| RF Power Simulation Example for Microwave Office® | Simulation model | 2012-06-11 |
其它
| 标题 | 类型 | 日期 |
|---|---|---|
| PCB Design BLF573(S) (Data sheet) | Design support | 2012-02-24 |
- HF / VHF power LDMOS transistor BLF573_S
- HF / VHF power LDMOS transistor BLF573_S
- HF / VHF power LDMOS transistor BLF573_S
- Mounting and Soldering of RF transistors aerospace_defense
- Fatigue in aluminum bond wires gan_devices
- RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
- flanged ceramic package; 2 mounting holes; 2 leads BLS7G2325L-105
- CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G2325L-105
- BLF573 ADS-2009 Model BLF573_S
- RF Power Model Library for Microwave Office® CLF1G0060_S_30
- RF Power Model Library Manual and Installation Instructions for Microwave Office® CLF1G0060_S_30
- RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
- PCB Design BLF573(S) (Data sheet) BLF573_S
