数据手册DataSheet 下载：BLF7G22LS-250P 功率LDMOS晶体管.pdf
250 W LDMOS功率晶体管，适用于2110 MHz至2170 MHz频率范围的基站应用。
产品特点
| 产品应用
|
订购型号
| 订购型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 订购器件的编号 |
| BLF7G22LS-250P | (SOT539B) | sot539b_po | Bulk Pack | 激活 | Standard Marking | BLF7G22LS-250P,112( 9340 646 91112 ) |
品质、可靠性及RoHS化学成分
| 订购型号 | 订购器件的编号 | RoHS / RHF | 无铅开始日期 | EFR | IFR (FIT) | MTBF（小时） | 潮湿敏感度等级 | MSL LF |
| BLF7G22LS-250P | BLF7G22LS-250P,112 |   | Always Pb-free | NA | NA | |||
| BLF7G22LS-250P | BLF7G22LS-250P,118 | | Always Pb-free | NA | NA |
产品技术资料
| 文档标题 | 类型分类 | 格式 | 更新日期 |
| BLF7G22L-250P_22LS-250P (中文)：Power LDMOS transistor | Data sheet | 2013-07-12 | |
| AN10896：Mounting and Soldering of RF transistors | Application note | 2012-12-19 | |
| 75017347：Enabling the Mobile Experience | Brochure | 2013-02-05 | |
| fatigue_in_aluminum_bond_wires：Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| 75017565：NXP's RF Manual 18th edition | Selection guide | 2014-06-17 | |
| BLF7G22-250P_ADS-2009_Model：BLF7G22-250P ADS-2009 Model | Simulation model | zip | 2013-02-28 |
| BLF7G22-250P_ADS-2011_Model：BLF7G22-250P ADS-2011 Model | Simulation model | zip | 2014-04-11 |
| sot539b_po：earless flanged balanced ceramic package; 4 leads | Outline drawing | 2012-05-08 |
- Power LDMOS transistor BLF7G22L_S_250P
- Power LDMOS transistor BLF7G22L_S_250P
- Power LDMOS transistor BLF7G22L_S_250P
- Mounting and Soldering of RF transistors aerospace_defense
- Enabling the Mobile Experience rf
- Fatigue in aluminum bond wires gan_devices
- NXP's RF Manual 18th edition OL2300NHN
- BLF7G22-250P ADS-2009 Model BLF7G22L_S_250P
- BLF7G22-250P ADS-2011 Model BLF7G22L_S_250P
- earless flanged balanced ceramic package; 4 leads BLU6H0410L_S_600P
