数据手册DataSheet 下载BLF888DS UHF功率LDMOS晶体管.pdf

600 W LDMOS RF功率晶体管,适合广播发射器应用。该器件凭借其出色的耐用性而非常适合数字和模拟发射器应用。

产品特点
  • 高效率
  • 高功率增益
  • 极佳的强度
  • 极佳的热稳定性
  • 集成式ESD保护
  • 设计用于宽带Doherty操作
  • 内部输入匹配,便于使用
  • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
产品应用
  • UHF频段内的广播发射器应用
  • 数字广播(DVB-T)
订购型号
订购型号封装Outline versionReflow-/Wave soldering包装产品状态标示订购器件的编号
BLF888DS(SOT539B)sot539b_poBulk Pack激活Standard MarkingBLF888DSU( 9340 678 65112 )
品质、可靠性及RoHS化学成分
订购型号订购器件的编号RoHS / RHF无铅开始日期EFRIFR (FIT)MTBF(小时)潮湿敏感度等级MSL LF
BLF888DSBLF888DSUAlways Pb-freeNA
产品技术资料
文档标题类型分类格式更新日期
BLF888D_BLF888DS (中文):UHF power LDMOS transistorData sheetpdf2014-06-27
AN10896:Mounting and Soldering of RF transistorsApplication notepdf2012-12-19
PCB_Design_BLF888D_BLF888DS_Data-sheet:PCB Design BLF888D(S) (Data sheet)Design supportzip2014-04-25
fatigue_in_aluminum_bond_wires:Fatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
75017565:NXP's RF Manual 18th editionSelection guidepdf2014-06-17
75017452:Ultra Wideband Doherty cuts Energy Consumption in HalfWhite paperpdf2013-06-05
sot539b_po:earless flanged balanced ceramic package; 4 leadsOutline drawingpdf2012-05-08
UHF power LDMOS transistor BLF888D_S
UHF power LDMOS transistor BLF888D_S
UHF power LDMOS transistor BLF888D_S
Mounting and Soldering of RF transistors aerospace_defense
PCB Design BLF888D(S) (Data sheet) BLF888D_S
Fatigue in aluminum bond wires gan_devices
NXP's RF Manual 18th edition OL2300NHN
Ultra Wideband Doherty cuts Energy Consumption in Half BLF888D_S
earless flanged balanced ceramic package; 4 leads BLU6H0410L_S_600P