BLL6H1214(LS)-500:LDMOS L波段雷达功率晶体管

500 W LDMOS功率晶体管主要用于1.2 GHz至1.4 GHz范围的L波段雷达应用。

特性和优势
    • 方便的功率控制
    • 集成ESD保护
    • 高度灵活的脉冲格式
    • 极佳的强度
    • 高效率
    • 极佳的热稳定性
    • 主要用于宽带操作(1.2 GHz至1.4 GHz)
    • 内部匹配以方便使用
    • 符合有害物质限制的Directive 2002/95/EC
应用
    • 1.2 GHz至1.4 GHz范围内的雷达应用
产品图片
关键参数
型号Package versionfrange [min] (MHz)frange [max] (MHz)PL(1dB) (W)VDS (V)η (%)GP (dB)Test signalProduct status
BLL6H1214-500SOT539A12001400500505017Pulsed RF; Pulsed RFProduction
BLL6H1214LS-500SOT539B12001400500505017Pulsed RF; Pulsed RFProduction
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLL6H1214-500

(SOT539A)
sot539a_poBulk Pack量产Standard MarkingBLL6H1214-500,112( 9340 632 84112 )
BLL6H1214LS-500

(SOT539B)
sot539b_poBulk Pack量产Standard MarkingBLL6H1214LS-500,11( 9340 660 65112 )
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLL6H1214-500BLL6H1214-500,112Always Pb-freeNANA
BLL6H1214LS-500BLL6H1214LS-500,11Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLL6H1214-500_1214LS-500 (中文)LDMOS L-band radar power transistorData sheetpdf2013-08-05
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
PCB_Design_BLL6H1214-500_1214LS-500_Data-sheetPCB Design BLL6H1214(LS)-500 (Data sheet)Design supportzip2012-02-24
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
ldmos_transistors_in_power_microwave_applicationsLDMOS Transistors in Power Microwave ApplicationsOther typepdf2009-01-13
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLL6H1214-500_ADS-2009_ModelBLL6H1214-500 ADS-2009 ModelSimulation modelzip2013-02-28
BLL6H1214-500_ADS-2011_ModelBLL6H1214-500 ADS-2011 ModelSimulation modelzip2014-04-11
sot539b_poearless flanged balanced ceramic package; 4 leadsOutline drawingpdf2012-05-08
sot539a_poflanged balanced ceramic package; 2 mounting holes; 4 leadsOutline drawingpdf2010-04-06
SOT539A_135CDFM4; Tape reel SMD; standard product orientation 12NC ending 135Packingpdf2012-12-03
SOT539A_112CDFM4; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
订购信息
型号订购码 (12NC)可订购的器件编号
BLL6H1214-5009340 632 84112BLL6H1214-500,112
BLL6H1214LS-5009340 660 65112BLL6H1214LS-500,11
模型
标题类型日期
BLL6H1214-500 ADS-2009 ModelSimulation model2013-02-28
BLL6H1214-500 ADS-2011 ModelSimulation model2014-04-11
其它
标题类型日期
PCB Design BLL6H1214(LS)-500 (Data sheet)Design support2012-02-24
LDMOS L-band radar power transistor BLL6H1214_LS_500
LDMOS L-band radar power transistor BLL6H1214_LS_500
LDMOS L-band radar power transistor BLL6H1214_LS_500
Mounting and Soldering of RF transistors aerospace_defense
Fatigue in aluminum bond wires gan_devices
LDMOS Transistors in Power Microwave Applications BLS6G2731_S_120
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged balanced ceramic package; 4 leads BLU6H0410L_S_600P
flanged balanced ceramic package; 2 mounting holes; 4 leads BLU6H0410L_S_600P
CDFM4; Tape reel SMD; standard product orientation 12NC ending 135 BLU6H0410L_S_600P
CDFM4; blister pack; standard product orientation 12NC ending 112 BLU6H0410L_S_600P
BLL6H1214-500 ADS-2009 Model BLL6H1214_LS_500
BLL6H1214-500 ADS-2011 Model BLL6H1214_LS_500
PCB Design BLL6H1214(LS)-500 (Data sheet) BLL6H1214_LS_500