BLL8H1214L(S)-250：LDMOS L-band radar power transistor

250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

特性和优势
    • Easy power control
    • Integrated dual side ESD protection
    • High flexibility with respect to pulse formats
    • Excellent ruggedness
    • High efficiency
    • Excellent thermal stability
    • Designed for broadband operation (1.2 GHz to 1.4 GHz)
    • Internally matched for ease of use
    • Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)
应用
    • L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency range
产品图片
关键参数
型号Package versionfrange [min] (MHz)frange [max] (MHz)PL(1dB) (W)VDS (V)η (%)GP (dB)Test signalProduct status
BLL8H1214L-250SOT502A12001400250505517Pulsed RF; Pulsed RFProduction
BLL8H1214LS-250SOT502B12001400250505517Pulsed RF; Pulsed RFProduction
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLL8H1214L-250

(SOT502A)		sot502a_poBulk Pack量产Standard MarkingBLL8H1214L-250U( 9340 687 33112 )
BLL8H1214LS-250

(SOT502B)		sot502b_poBulk Pack量产Standard MarkingBLL8H1214LS-250U( 9340 687 35112 )
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLL8H1214L-250BLL8H1214L-250UAlways Pb-freeNANA
BLL8H1214LS-250BLL8H1214LS-250UAlways Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLL8H1214L-250_1214LS-250 (中文)LDMOS L-band radar power transistorData sheetpdf2015-01-13
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
PCB_Design_BLL8H1214L-250_1214LS-250_Data-sheetPCB Design BLL8H1214L(S)-250 (Data sheet)Design supportzip2015-01-06
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
RFPower_Longevity_OverviewRF Power Longevity OverviewOther typepdf2014-09-09
sot502b_poearless flanged ceramic package; 2 leadsOutline drawingpdf2007-05-08
SOT502B_112CDFM2; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
sot502a_poflanged ceramic package; 2 mounting holes; 2 leadsOutline drawingpdf2009-10-08
SOT502A_112CDFM2; blister pack; standard product orientation 12NC ending 112Packingpdf2012-11-30
SOT502A_135Tape reel SMD; standard product orientation 12NC ending 135Packingpdf2012-12-03
订购信息
型号订购码 (12NC)可订购的器件编号
BLL8H1214L-2509340 687 33112BLL8H1214L-250U
BLL8H1214LS-2509340 687 35112BLL8H1214LS-250U
其它
标题类型日期
PCB Design BLL8H1214L(S)-250 (Data sheet)Design support2015-01-06
LDMOS L-band radar power transistor BLL8H1214L_S_250
Mounting and Soldering of RF transistors aerospace_defense
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
RF Power Longevity Overview gan_devices
earless flanged ceramic package; 2 leads BLS7G3135LS-200
CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G3135LS-200
flanged ceramic package; 2 mounting holes; 2 leads BLS7G2325L-105
CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G2325L-105
Tape reel SMD; standard product orientation 12NC ending 135 BLS6G3135_S_120
PCB Design BLL8H1214L(S)-250 (Data sheet) BLL8H1214L_S_250
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