BLP25M710：宽带LDMOS驱动晶体管
10 W LDMOS功率晶体管，适合HF至2500 MHz频段内的广播和工业应用。
特性和优势
应用
| 产品图片 |
关键参数
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 10 | 2500 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 10 | W | |||
| Gp | power gain | VDS = 28 V; f < 2450 MHz; PL = 10 W [0] | 16.2 | dB | ||
| ηD | drain efficiency | VDS = 28 V; f < 2450 MHz; IDq = 80 mA; PL = 10 W [0] | 64.5 | % |
封装与包装
| 型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 可订购的器件编号, (订购码 (12NC)) |
|---|---|---|---|---|---|---|---|
| BLP25M710 |  HVSON12 (SOT1179-2) | sot1179-2_po | sot1179-2_fr | Reel 7" Q1/T1 in Drypack | 量产 | Standard Marking | BLP25M710Z( 9340 675 81515 ) |
引脚配置信息
| Pin | Symbol | Description | 外形简图 | 图形符号 |
|---|---|---|---|---|
| 1 | n.c. | not connected |  |  |
| 2 | GATE1 | gate1 | ||
| 3 | GATE1 | gate1 | ||
| 4 | GATE2 | gate2 | ||
| 5 | GATE2 | gate2 | ||
| 6 | n.c. | not connected | ||
| 7 | n.c. | not connected | ||
| 8 | DRAIN2 | drain2 | ||
| 9 | DRAIN2 | drain2 | ||
| 10 | DRAIN1 | drain1 | ||
| 11 | DRAIN1 | drain1 | ||
| 12 | n.c. | not connected | ||
| 13 | SOURCE | source |
无铅环保信息
| 型号 | 可订购的器件编号 | RoHS / RHF | 无铅转换日期 | 潮湿敏感度等级 | MSL LF |
|---|---|---|---|---|---|
| BLP25M710 | BLP25M710Z |   | Always Pb-free | 3 | 3 |
文档资料
| 档案名称 | 标题 | 类型 | 格式 | 日期 |
|---|---|---|---|---|
| BLP25M710 (中文) | Broadband LDMOS driver transistor | Data sheet | 2013-08-29 | |
| AN10896 | Mounting and Soldering of RF transistors | Application note | 2015-03-24 | |
| AN11198 | Life-time requirements of NXP HVSON12 plastic drivers | Application note | 2013-05-27 | |
| fatigue_in_aluminum_bond_wires | Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| NXP_RF_manual_19th_edition | RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 | Other type | 2015-05-19 | |
| Application_Measurement_Report_BLP25M710_420-470MHz_CA-249-13 | Application Measurement Report BLP25M710 420-470 MHz CA-249-13 | Report | 2015-06-23 | |
| BLP25M710_ADS-2009_Model | BLP25M710 ADS-2009 Model | Simulation model | zip | 2013-08-06 |
| BLP25M710_ADS-2012_Model | BLP25M710 ADS-2012 Model | Simulation model | zip | 2014-05-02 |
| sot1179-2_po | plastic thermal enhanced very thin small outline package; no leads; 12 terminals; body 4 x 6 x 0.85 mm | Outline drawing | 2013-02-27 | |
| sot1179-2_fr | Footprint for reflow soldering SOT1179-2 | Reflow soldering | 2012-12-20 |
订购信息
| 型号 | 订购码 (12NC) | 可订购的器件编号 |
|---|---|---|
| BLP25M710 | 9340 675 81515 | BLP25M710Z |
模型
| 标题 | 类型 | 日期 |
|---|---|---|
| BLP25M710 ADS-2009 Model | Simulation model | 2013-08-06 |
| BLP25M710 ADS-2012 Model | Simulation model | 2014-05-02 |
- Broadband LDMOS driver transistor BLP25M710
- Mounting and Soldering of RF transistors aerospace_defense
- Life-time requirements of NXP HVSON12 plastic drivers BLP7G22-10
- Fatigue in aluminum bond wires gan_devices
- RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
- Application Measurement Report BLP25M710 420-470 MHz CA-249-13 BLP25M710
- plastic thermal enhanced very thin small outline package; no leads; 12 terminals; body 4 x 6 x 0.85 mm BLP7G22-10
- Footprint for reflow soldering SOT1179-2 BLP7G22-10
- BLP25M710 ADS-2009 Model BLP25M710
- BLP25M710 ADS-2012 Model BLP25M710
