BLS6G3135(S)-20:LDMOS S波段雷达功率晶体管

20 W LDMOS功率晶体管,用于3.1 GHz至3.5 GHz范围的雷达应用。

特性和优势
    • 极佳的强度
    • 集成ESD保护
    • 极佳的热稳定性
    • 内部匹配以方便使用
    • 高效率
    • 主要用于宽带操作(3.1 GHz至3.5 GHz)
    • 符合有害物质限制的Directive 2002/95/EC
应用
    • 3.1 GHz至3.5 GHz频率范围内的雷达应用
    • S频段功率放大器
产品图片
关键参数
型号Package versionfrange [min] (MHz)frange [max] (MHz)PL(1dB) (W)VDS (V)η (%)GP (dB)Test signalProduct status
BLS6G3135-20SOT608A3100350020324515.5Pulsed RF; Pulsed RFProduction
BLS6G3135S-20SOT608B3100350020324515.5Pulsed RF; Pulsed RFProduction
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLS6G3135-20
CDFM2
(SOT608A)
sot608a_poBulk Pack量产Standard MarkingBLS6G3135-20,112( 9340 600 62112 )
BLS6G3135S-20
CDFM2
(SOT608B)
sot608b_poBulk Pack量产Standard MarkingBLS6G3135S-20,112( 9340 610 39112 )
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLS6G3135-20BLS6G3135-20,112Always Pb-freeNANA
BLS6G3135S-20BLS6G3135S-20,112Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLS6G3135-20_6G3135S-20 (中文)LDMOS S-Band radar power transistorData sheetpdf2013-03-11
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
PCB_Design_BLS6G3135-20_6G3135S-20_Data-sheetPCB Design BLS6G3135(S)-20 (Data sheet)Design supportzip2012-02-24
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
layout_pcb_in_out_bls6g3135s-20layout_pcb_in_out_bls6g3135s-20Other typezip2009-01-15
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
RFPower_Longevity_OverviewRF Power Longevity OverviewOther typepdf2014-09-09
Application_Measurement_Report_BLS6G3135-20_3100-3500MHz_NA-1428Application Measurement Report BLS6G3135-20 3100-3500 MHz NA-1428Reportpdf2015-06-23
BLS6G3135-20_ADS-2009_ModelBLS6G3135-20 ADS-2009 ModelSimulation modelzip2013-02-28
sot608b_poceramic earless flanged package; 2 leadsOutline drawingpdf2006-12-05
sot608a_poflanged ceramic package; 2 mounting holes; 2 leadsOutline drawingpdf2002-02-10
SOT608A_112CDFM2; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
订购信息
型号订购码 (12NC)可订购的器件编号
BLS6G3135-209340 600 62112BLS6G3135-20,112
BLS6G3135S-209340 610 39112BLS6G3135S-20,112
模型
标题类型日期
BLS6G3135-20 ADS-2009 ModelSimulation model2013-02-28
其它
标题类型日期
PCB Design BLS6G3135(S)-20 (Data sheet)Design support2012-02-24
LDMOS S-Band radar power transistor BLS6G3135_S_20
LDMOS S-Band radar power transistor BLS6G3135_S_20
LDMOS S-Band radar power transistor BLS6G3135_S_20
Mounting and Soldering of RF transistors aerospace_defense
Fatigue in aluminum bond wires gan_devices
layout_pcb_in_out_bls6g3135s-20 BLS6G3135_S_20
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
RF Power Longevity Overview gan_devices
Application Measurement Report BLS6G3135-20 3100-3500 MHz NA-1428 BLS6G3135_S_20
ceramic earless flanged package; 2 leads BLS6G3135_S_20
flanged ceramic package; 2 mounting holes; 2 leads BLS6G3135_S_20
CDFM2; blister pack; standard product orientation 12NC ending 112 BLS6G3135_S_20
BLS6G3135-20 ADS-2009 Model BLS6G3135_S_20
PCB Design BLS6G3135(S)-20 (Data sheet) BLS6G3135_S_20