BUK6E2R0-30C: N-channel TrenchMOS® intermediate level FET
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS® technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
SOT226
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| N-channel TrenchMOS® intermediate level FET (REV 2.0) PDF (182.0 kB) BUK6E2R0-30C | 07 Sep 2010 |
Application Notes (12)
| Name/Description | Modified Date |
|---|---|
| Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN11599 | 13 Jul 2016 |
| Power MOSFET single-shot and repetitive avalanche ruggedness rating (REV 3.0) PDF (146.0 kB) AN10273 | 10 Dec 2015 |
| LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH | 22 May 2014 |
| Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN11261 | 19 May 2014 |
| Understanding power MOSFET data sheet parameters (REV 4.0) PDF (571.0 kB) AN11158 | 04 Feb 2014 |
| Understanding power MOSFET data sheet parameters (REV 3.0) PDF (903.0 kB) AN11158_ZH | 08 Nov 2013 |
| Failure signature of Electrical Overstress on Power MOSFETs (REV 1.0) PDF (10.5 MB) AN11243 | 29 Oct 2012 |
| Using Power MOSFET Zth Curves (REV 1.0) PDF (212.0 kB) AN11156 | 10 Oct 2012 |
| Designing RC Snubbers (REV 1.0) PDF (565.0 kB) AN11160 | 01 Oct 2012 |
| LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH | 14 Sep 2012 |
| LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN11113 | 16 Nov 2011 |
| LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN10874 | 27 Jan 2011 |
Brochures (1)
| Name/Description | Modified Date |
|---|---|
| Leading-edge Automotive Power MOSFETs (REV 1.0) PDF (1.5 MB) 75016982 | 15 Sep 2010 |
Selector Guides (3)
| Name/Description | Modified Date |
|---|---|
| Automotive MOSFET Selection Guide 2016: Performance, Quality, Reliability (REV 1.0) PDF (8.3 MB) 75017643 | 01 Apr 2016 |
| Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 75017631 | 17 Feb 2016 |
| 车用 MOSFET 选型指南2015版 (chinese version) (REV 1.0) PDF (2.9 MB) 75017651 | 17 Apr 2015 |
Package Information (1)
| Name/Description | Modified Date |
|---|---|
| plastic single-ended package (I2PAK); TO-262 (REV 1.0) PDF (173.0 kB) SOT226 | 08 Feb 2016 |
Reports or Presentations (1)
| Name/Description | Modified Date |
|---|---|
| High Efficiency HVAC blower motor control (REV 1.0) PDF (180.0 kB) R_10067 | 14 Apr 2016 |
Supporting Information (1)
| Name/Description | Modified Date |
|---|---|
| Power MOSFET frequently asked questions and answers (REV 2.0) PDF (1.6 MB) TN00008 | 31 Oct 2016 |
Thermal design
- BUK6E2R0-30C RC Thermal Model (REV 2.4) PDF BUK6E2R0-30C_RC_THERMAL_MODEL 1/2/2012
Thermal model
- BUK6E2R0-30C Thermal model (REV 1.0) pdml BUK6E2R0-30C_1 9/24/2010
Ordering Information
| Product | Status | Package version | Package name | Channel type | Number of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | RDSon [max] @ VGS = 4.5 V (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | RDSon [typ] @ VGS = 10 V (mΩ) | ID [max] (A) | RDSon [typ] @ VGS = 5 V (mΩ) | RDSon [typ] @ VGS = 4.5 V (mΩ) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | QG(tot) [typ] @ VGS = 10 V (nC) | RDSon [max] @ Tj = 175 °C (mΩ) | ID [max] @ T = 100 °C (A) | IDM [max] (A) | QGD [typ] (nC) | QG(tot) [typ] (nC) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Rth(j-mb) [max] (K/W) | Date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK6E2R0-30C | Active | SOT226 | I2PAK | N | 1 | 30 | 2.2 | 3 | 3.7 | 1.9 | 120 | 2.3 | 2.6 | 306 | 229 | 4.2 | 120 | 1082 | 63 | 131 | 138 | 2.3 | Y | 11223 | 1780 | 0.49 | 2010-10-12 |
Package Information
| Product ID | Package Description | Outline Version | Reflow/Wave Soldering | Packing | Product Status | Part NumberOrdering code(12NC) | Marking | Chemical Content | RoHS / Pb Free / RHF | MSL | MSL LF |
|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK6E2R0-30C | | SOT226 | Horizontal, Rail Pack | Active | BUK6E2R0-30C,127 (9340 644 71127) | BUK6E2R0-30C | BUK6E2R0-30C |   | NA | NA |
- N-channel TrenchMOS® intermediate level FET BUK6E2R0-30C
- Using power MOSFETs in parallel BUK7M12-60E
- Power MOSFET single-shot and repetitive avalanche ruggedness rating BUK7M12-60E
- LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E
- Using RC Thermal Models BUK7M12-60E
- Understanding power MOSFET data sheet parameters BUK7M12-60E
- Understanding power MOSFET data sheet parameters BUK7K6R8-40E
- Failure signature of Electrical Overstress on Power MOSFETs BUK7M12-60E
- Using Power MOSFET Zth Curves BUK7M12-60E
- Designing RC Snubbers BUK7M12-60E
- LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E
- LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E
- LFPAK MOSFET thermal design guide BUK7M12-60E
- Leading-edge Automotive Power MOSFETs BUK7E2R3-40C
- Automotive MOSFET Selection Guide 2016: Performance, Quality, Reliability BUK7M12-60E
- Discretes Semiconductors Selection Guide 2016 BUK7M12-60E
- 车用 MOSFET 选型指南2015版 (chinese version) BUK7E8R3-40E
- High Efficiency HVAC blower motor control BUK7M12-60E
- Power MOSFET frequently asked questions and answers BUK7M12-60E
- BUK6E2R0-30C RC Thermal Model BUK6E2R0-30C
- BUK6E2R0-30C Thermal model BUK6E2R0-30C
- plastic single-ended package (I2PAK); TO-262 BUK7E8R3-40E
- PSMN8R5-100ES
