CLF1G0035(S)-100：宽带RF功率GaN HEMT
CLF1G0035-100和CLF1G0035S-100是宽带通用100 W放大器，采用恩智浦的第1代GaN HEMT技术。工作频率为DC至3.5 GHz。
特性和优势
应用
| 产品图片  |
关键参数
| 型号 | Package version | frange [min] (MHz) | frange [max] (MHz) | PL(1dB) (W) | VDS (V) | η (%) | GP (dB) | Test signal | Product status |
|---|---|---|---|---|---|---|---|---|---|
| CLF1G0035-100 | SOT467C | 0 | 3500 | 100 | 50 | 59.5 | 13.9 | Pulsed RF; Pulsed RF | Production |
| CLF1G0035S-100 | SOT467B | 0 | 3500 | 100 | 50 | 59.5 | 13.9 | Pulsed RF; Pulsed RF | Development |
封装与包装
| 型号 | 封装 | Outline version | Reflow-/Wave soldering | 包装 | 产品状态 | 标示 | 可订购的器件编号, (订购码 (12NC)) |
|---|---|---|---|---|---|---|---|
| CLF1G0035-100 |  (SOT467C) | sot467c_po | Bulk Pack | 量产 | Standard Marking | CLF1G0035-100,112( 9340 669 67112 ) | |
| CLF1G0035S-100 |  (SOT467B) | sot467b_po | Bulk Pack | 开发中 | Standard Marking | CLF1G0035S-100,112( 9340 669 66112 ) |
无铅环保信息
| 型号 | 可订购的器件编号 | RoHS / RHF | 无铅转换日期 | 潮湿敏感度等级 | MSL LF |
|---|---|---|---|---|---|
| CLF1G0035-100 | CLF1G0035-100,112 |   | Always Pb-free | ||
| CLF1G0035S-100 | CLF1G0035S-100,112 | | Always Pb-free |
文档资料
| 档案名称 | 标题 | 类型 | 格式 | 日期 |
|---|---|---|---|---|
| AN11130 | Bias module for 50 V GaN demonstration boards | Application note | 2011-12-08 | |
| PCB_Design_CLF1G0035-100_1G0035S-100_Data-sheet | PCB Design CLF1G0035(S)-100 (Data sheet) | Design support | zip | 2014-08-18 |
| fatigue_in_aluminum_bond_wires | Fatigue in aluminum bond wires | Mounting and soldering | 2009-10-08 | |
| NXP_RF_manual_19th_edition | RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 | Other type | 2015-05-19 | |
| RFPower_Longevity_Overview | RF Power Longevity Overview | Other type | 2014-09-09 | |
| Application_Measurement_Report_CLF1G0035-100_3100-3500MHz_NA-1766 | Application Measurement Report CLF1G0035-100 3100-3500 MHz NA-1766 | Report | 2015-06-23 | |
| NXP_RFpower_Lib_V09p0 | RF Power Model Library for Microwave Office® | Simulation model | zip | 2014-11-11 |
| NXP_RFpower_Manual_MWO_20141111 | RF Power Model Library Manual and Installation Instructions for Microwave Office® | Simulation model | 2014-11-11 | |
| CLF1G0035-100_ADS-2009_Model | CLF1G0035-100 ADS-2009 Model | Simulation model | zip | 2013-03-04 |
| NXP_RFPower_Simulation_Example | RF Power Simulation Example for Microwave Office® | Simulation model | zip | 2012-06-11 |
| CLF1G0035-100_ADS-2011_Model | CLF1G0035-100 ADS-2011 Model | Simulation model | zip | 2013-03-04 |
| NXP_CLF1G0035_100_V0p7_Spar_Vgs_2n2_Vd_50_Idq_330mA_10Mto8GHz | CLF1G0035-100 50V 330mA S-parameter Data | S-parameter | s2p | 2012-04-04 |
| sot467c_po | flanged ceramic package; 2 mounting holes; 2 leads | Outline drawing | 1999-12-27 | |
| SOT467C_112 | CDFM2; blister pack; standard product orientation 12NC ending 112 | Packing | 2012-11-30 | |
| sot467b_po | earless ceramic package; 2 leads | Outline drawing | 2012-05-08 |
订购信息
| 型号 | 订购码 (12NC) | 可订购的器件编号 |
|---|---|---|
| CLF1G0035-100 | 9340 669 67112 | CLF1G0035-100,112 |
| CLF1G0035S-100 | 9340 669 66112 | CLF1G0035S-100,112 |
模型
| 标题 | 类型 | 日期 |
|---|---|---|
| RF Power Model Library for Microwave Office® | Simulation model | 2014-11-11 |
| RF Power Model Library Manual and Installation Instructions for Microwave Office® | Simulation model | 2014-11-11 |
| CLF1G0035-100 ADS-2009 Model | Simulation model | 2013-03-04 |
| RF Power Simulation Example for Microwave Office® | Simulation model | 2012-06-11 |
| CLF1G0035-100 ADS-2011 Model | Simulation model | 2013-03-04 |
| CLF1G0035-100 50V 330mA S-parameter Data | S-parameter | 2012-04-04 |
其它
| 标题 | 类型 | 日期 |
|---|---|---|
| PCB Design CLF1G0035(S)-100 (Data sheet) | Design support | 2014-08-18 |
- Bias module for 50 V GaN demonstration boards gan_devices
- Fatigue in aluminum bond wires gan_devices
- RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
- RF Power Longevity Overview gan_devices
- Application Measurement Report CLF1G0035-100 3100-3500 MHz NA-1766 CLF1G0035_S_100
- flanged ceramic package; 2 mounting holes; 2 leads CLF1G0035_S_50
- CDFM2; blister pack; standard product orientation 12NC ending 112 CLF1G0035_S_50
- earless ceramic package; 2 leads CLF1G0035_S_50
- RF Power Model Library for Microwave Office® CLF1G0060_S_30
- RF Power Model Library Manual and Installation Instructions for Microwave Office® CLF1G0060_S_30
- CLF1G0035-100 ADS-2009 Model CLF1G0035_S_100
- RF Power Simulation Example for Microwave Office® CLF1G0060_S_30
- CLF1G0035-100 ADS-2011 Model CLF1G0035_S_100
- CLF1G0035-100 50V 330mA S-parameter Data CLF1G0035_S_100
- PCB Design CLF1G0035(S)-100 (Data sheet) CLF1G0035_S_100
