MHT1004N: 2450 MHz, 300 W CW, 32 V RF LDMOS Transistor for Consumer and Commercial Cooking

For additional information contact NXP® Semiconductor.

OM-780-2L, OM-780G-2L Package Images
特性
  • Characterized with series equivalent large-signal impedance parameters and common source S-parameters
  • Internally matched for ease of use
  • Qualified for operation at 32 Vdc
  • Integrated ESD protection
  • 150°C case operating temperature
  • 225°C die temperature capability
  • RoHS Compliant
特性
  • Consumer cooking
  • Commercial cooking
Data Sheets (1)
Name/DescriptionModified Date
MHT1004N 300 W CW, 2450 MHz, 32 V Data Sheet (REV 1) PDF (432.9 kB) MHT1004N25 Aug 2016
Application Notes (2)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (2)
Name/DescriptionModified Date
98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins (REV C) PDF (68.6 kB) 98ASA10831D22 Mar 2016
98ASA00442D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 3 Pins (REV A) PDF (76.9 kB) 98ASA00442D15 Feb 2016
Printed Circuit Boards
Ordering Information
ProductStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MHT1004NR3Active245024503254.5280300 @ CWCW15.2 @ 245057.90.24UnmatchedABLDMOS
MHT1004GNR3Active245024503254.5280300 @ CWCW15.2 @ 245057.90.24UnmatchedABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
OM780-2 GULL98ASA00442DMPQ - 250 REELPOQ - 250 REELActiveMHT1004GNR3MHT1004GNR3.pdf3260
OM780-2 Straight Cu98ASA10831DMPQ - 250 REELPOQ - 250 BOXActiveMHT1004NR3MHT1004NR3.pdf3260
MHT1004N 300 W CW, 2450 MHz, 32 V Data Sheet MHT1004N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
MHT1004N 2450 MHz PCB Device Reference Circuit DXF file MHT1004N
98ASA00442D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 3 Pins MHT1004N
MHT1004GNR3.pdf MHT1004N
98ASA10831D, OMNI, 20.57x9.78x3.81, Pitch 9.96, 2 Pins MMRF1017N
MHT1004NR3.pdf MHT1004N