MMRF1007H: 965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs

NI-1230H-4S, NI-1230S-4S Package Image
特性
  • Typical Pulse Performance: VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10% Power Gain: 20 dB Drain Efficiency: 56%
  • Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 W Peak Power
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Designed for Push-Pull Operation
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
  • These products are included in Our product longevity program with assured supply for a minimum of 10 years after launch.
Data Sheets (1)
Name/DescriptionModified Date
MMRF1007HR5, MMRF1007HSR5 965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs - Data Sheet (REV 0) PDF (812.6 kB) MMRF1007H27 Dec 2013
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Brochures (1)
Name/DescriptionModified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR161116 May 2016
Package Information (2)
Name/DescriptionModified Date
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C05 Apr 2016
98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins (REV H) PDF (44.6 kB) 98ARB18247C23 Feb 2016
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MMRF1007HSR5Active9651215506010001000 @ PeakPulse20 @ 1030560.02UnmatchedABLDMOS
MMRF1007HR5Active9651215506010001000 @ PeakPulse20 @ 1030560.02UnmatchedABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-123098ASB16977CMPQ - 50 REELPOQ - 50 REELActiveMMRF1007HR5MMRF1007HR5.pdf260
NI-1230S98ARB18247CMPQ - 50 REELPOQ - 50 REELActiveMMRF1007HSR5MMRF1007HSR5.pdf260
MMRF1007HR5, MMRF1007HSR5 965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs - Data Sheet MMRF1007H
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Aerospace and Defense Solutions Brochure MMRF5300N
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
MMRF1007HR5.pdf MMRF1007H
98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
MMRF1007HSR5.pdf MMRF1007H