MMRF1008H: 960-1215 MHz, 275 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs

NI-780H-2L, NI-780S-2L, NI-780GH-2L Package Image
特性
  • Typical Pulse Performance: VDD = 50 Vdc, IDQ = 100 mA, Pout = 275 W Peak (27.5 Watts Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10% Power Gain: 20.3 dB Drain Efficiency: 65.5%
  • Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 275 W Peak Power
  • Typical Broadband Performance: VDD = 50 Vdc, IDQ = 100 mA, Pout = 250 W Peak (25 Watts Avg.), f = 960–1215 MHz, Pulse Width = 128 µsec, Duty Cycle = 10% Power Gain: 19.8 dB Drain Efficiency: 58%
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • These products are included in Our product longevity program with assured supply for a minimum of 10 years after launch.
Data Sheets (1)
Name/DescriptionModified Date
MMRF1008H 960-1215 MHz, 275 W, 50 V Data Sheet (REV 1) PDF (1.2 MB) MMRF1008H15 May 2016
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Brochures (1)
Name/DescriptionModified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR161116 May 2016
Package Information (3)
Name/DescriptionModified Date
98ASA00961D, NI-C, 34.05x9.8x34.03, Pitch 27.94, 3 Pins (REV A) PDF (50.9 kB) 98ASA00961D05 May 2016
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins (REV H) PDF (44.1 kB) 98ASB15607C22 Mar 2016
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins (REV J) PDF (43.5 kB) 98ASB16718C22 Mar 2016
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MMRF1008HSR5Active96012155054.4275275 @ PeakPulse20.3 @ 103065.50.08I/OABLDMOS
MMRF1008GHR5Active96012155054.4275275 @ PeakPulse20.3 @ 103065.50.08I/OABLDMOS
MMRF1008HR5Active96012155054.4275275 @ PeakPulse20.3 @ 103065.50.08I/OABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-78098ASB15607CMPQ - 50 REELPOQ - 50 REELActiveMMRF1008HR5MMRF1008HR5.pdf260
NI-780S98ASB16718CMPQ - 50 REELPOQ - 50 REELActiveMMRF1008HSR5MMRF1008HSR5.pdf260
NI-780GH-2L98ASA00961DMPQ - 50 REELPOQ - 50 REELActiveMMRF1008GHR5MMRF1008GHR5.pdf260
MMRF1008H 960-1215 MHz, 275 W, 50 V Data Sheet MMRF1008H
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Aerospace and Defense Solutions Brochure MMRF5300N
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins MMRF1011H
MMRF1008HR5.pdf MMRF1008H
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins MMRF1011H
MMRF1008HSR5.pdf MMRF1008H
98ASA00961D, NI-C, 34.05x9.8x34.03, Pitch 27.94, 3 Pins MMRF1008H
MMRF1008GHR5.pdf MMRF1008H