MMRF1008H: 960-1215 MHz, 275 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs
NI-780H-2L, NI-780S-2L, NI-780GH-2L Package Image
特性
- Typical Pulse Performance: VDD = 50 Vdc, IDQ = 100 mA, Pout = 275 W Peak (27.5 Watts Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10% Power Gain: 20.3 dB Drain Efficiency: 65.5%
- Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 275 W Peak Power
- Typical Broadband Performance: VDD = 50 Vdc, IDQ = 100 mA, Pout = 250 W Peak (25 Watts Avg.), f = 960–1215 MHz, Pulse Width = 128 µsec, Duty Cycle = 10% Power Gain: 19.8 dB Drain Efficiency: 58%
- Characterized with Series Equivalent Large–Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- RoHS Compliant
- These products are included in Our product longevity program with assured supply for a minimum of 10 years after launch.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MMRF1008H 960-1215 MHz, 275 W, 50 V Data Sheet (REV 1) PDF (1.2 MB) MMRF1008H | 15 May 2016 |
Application Notes (1)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Brochures (1)
| Name/Description | Modified Date |
|---|---|
| RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 | 16 May 2016 |
Package Information (3)
| Name/Description | Modified Date |
|---|---|
| 98ASA00961D, NI-C, 34.05x9.8x34.03, Pitch 27.94, 3 Pins (REV A) PDF (50.9 kB) 98ASA00961D | 05 May 2016 |
| 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins (REV H) PDF (44.1 kB) 98ASB15607C | 22 Mar 2016 |
| 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins (REV J) PDF (43.5 kB) 98ASB16718C | 22 Mar 2016 |
Ordering Information
| Product | Status | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MMRF1008HSR5 | Active | 960 | 1215 | 50 | 54.4 | 275 | 275 @ Peak | Pulse | 20.3 @ 1030 | 65.5 | 0.08 | I/O | AB | LDMOS | |
| MMRF1008GHR5 | Active | 960 | 1215 | 50 | 54.4 | 275 | 275 @ Peak | Pulse | 20.3 @ 1030 | 65.5 | 0.08 | I/O | AB | LDMOS | |
| MMRF1008HR5 | Active | 960 | 1215 | 50 | 54.4 | 275 | 275 @ Peak | Pulse | 20.3 @ 1030 | 65.5 | 0.08 | I/O | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | PPT (°C) |
|---|---|---|---|---|---|---|---|
| NI-780 | 98ASB15607C | MPQ - 50 REELPOQ - 50 REEL | Active | MMRF1008HR5 | MMRF1008HR5.pdf |   | 260 |
| NI-780S | 98ASB16718C | MPQ - 50 REELPOQ - 50 REEL | Active | MMRF1008HSR5 | MMRF1008HSR5.pdf | | 260 |
| NI-780GH-2L | 98ASA00961D | MPQ - 50 REELPOQ - 50 REEL | Active | MMRF1008GHR5 | MMRF1008GHR5.pdf | | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Aerospace and Defense Solutions Brochure MMRF5300N
- 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins MMRF1011H
- MMRF1008HR5.pdf MMRF1008H
- 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins MMRF1011H
- MMRF1008HSR5.pdf MMRF1008H
- 98ASA00961D, NI-C, 34.05x9.8x34.03, Pitch 27.94, 3 Pins MMRF1008H
- MMRF1008GHR5.pdf MMRF1008H
