MMRF1315N: 500-1000 MHz, 60 W CW, 28 V Broadband RF Power LDMOS Transistor

TO-270-2 Package Image
特性
  • Typical Single-Carrier N-CDMA Performance @ 880 MHz, VDD = 28 Vdc, IDQ = 450 mA, Pout = 14 W Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain: 21.1 dB Drain Efficiency: 33% ACPR @ 750 kHz Offset: –45.7 dBc in 30 kHz Bandwidth
  • Capable of Handling 10:1 VSWR @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness
  • Typical GSM EDGE Performance: VDD = 28 Vdc, IDQ = 500 mA, Pout = 21 W Avg., Full Frequency Band (920-960 MHz) Power Gain: 20 dB Drain Efficiency: 46% Spectral Regrowth @ 400 kHz Offset = –62 dBc Spectral Regrowth @ 600 kHz Offset = –78 dBc EVM: 1.5% rms
  • Typical GSM Performance: VDD = 28 Vdc, IDQ = 500 mA, Pout = 60 W, Full Frequency Band (920-960 MHz) Power Gain: 20 dB Drain Efficiency: 63%
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
MMRF1315NR1 500-1000 MHz, 60 W CW, 28 V Broadband RF Power LDMOS Transistor - Data Sheet (REV 0) PDF (808.3 kB) MMRF1315N25 Jul 2014
Application Notes (2)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Brochures (1)
Name/DescriptionModified Date
RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR161116 May 2016
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (1)
Name/DescriptionModified Date
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins (REV R) PDF (80.5 kB) 98ASH98117A26 Feb 2016
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MMRF1315NR1Active50010002847.86014 @ AVGN-CDMA21.1 @ 880330.88UnmatchedABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
TO-270-298ASH98117AMPQ - 500 REELPOQ - 500 BOXActiveMMRF1315NR1MMRF1315NR1.pdf3260
MMRF1315NR1 500-1000 MHz, 60 W CW, 28 V Broadband RF Power LDMOS Transistor - Data Sheet MMRF1315N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Aerospace and Defense Solutions Brochure MMRF5300N
RF Products Selector Guide MMT20303H
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins aft09ms031n
MMRF1315NR1.pdf MMRF1315N