MMRF1316N: 1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistor
TO-270WB-4 Package Image
特性
- Wide Operating Frequency Range
- Extreme Ruggedness
- Unmatched Input and Output Allowing Wide Frequency Range Utilization
- Integrated Stability Enhancements
- Low Thermal Resistance
- Integrated ESD Protection Circuitry
- RoHS Compliant
- In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MMRF1316NR1 1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistor - Data Sheet (REV 0) PDF (969.0 kB) MMRF1316N | 25 Jul 2014 |
Application Notes (2)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
| RF LDMOS Power Modules for GSM Base Station Application: Optimum Biasing Current - Application Notes (REV 0) PDF (90.5 kB) AN1643 | 31 Jan 1998 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Brochures (1)
| Name/Description | Modified Date |
|---|---|
| RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 | 16 May 2016 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (1)
| Name/Description | Modified Date |
|---|---|
| 98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins (REV F) PDF (75.9 kB) 98ASA10577D | 18 Jan 2016 |
Ordering Information
| Product | Status | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MMRF1316NR1 | Active | 1.8 | 600 | 50 | 54.8 | 300 | 300 @ CW | CW | 25 @ 230 | 70 | 0.22 | Unmatched | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | MSL | PPT (°C) |
|---|---|---|---|---|---|---|---|---|
| TO-270 WB-4 | 98ASA10577D | MPQ - 500 REELPOQ - 500 REEL | Active | MMRF1316NR1 | MMRF1316NR1.pdf |  | 3 | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- RF LDMOS Power Modules for GSM Base Station Application: Optimum Biasing Current - Application Notes MMRF1316N
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Aerospace and Defense Solutions Brochure MMRF5300N
- RF Products Selector Guide MMT20303H
- 98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins aft09mp055n
- MMRF1316NR1.pdf MMRF1316N
