MMRF1317H: 1030-1090 MHz, 1300 W Peak, 50 V RF Power LDMOS Transistors
NI-1230H-4S, NI-1230S-4S Package Image
特性
- Internally input and output matched for broadband operation and ease of use
- Device can be used in a single-ended, push-pull, or quadrature configuration
- High ruggedness,handles > 10:1 VSWR
- Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing
- Characterized with series equivalent large-signal impedance parameters
- RoHS Compliant
特性
- Ground-based secondary surveillance radars
- IFF transponders
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MMRF1317H 1030-1090 MHz, 1300 W Peak, 50 V Data Sheet (REV 0) PDF (866.6 kB) MMRF1317H | 25 Mar 2016 |
Application Notes (2)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
| AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages (REV 1) PDF (664.6 kB) AN1908 | 24 Feb 2011 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Brochures (1)
| Name/Description | Modified Date |
|---|---|
| RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 | 16 May 2016 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (2)
| Name/Description | Modified Date |
|---|---|
| 98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C | 05 Apr 2016 |
| 98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins (REV H) PDF (44.6 kB) 98ARB18247C | 23 Feb 2016 |
Supporting Information (1)
| Name/Description | Modified Date |
|---|---|
| RF Military High Power Avionics Devices (REV 0) PDF (726.5 kB) MILITARY_HIGH_POWER_RADAR_TRN_SI | 25 Mar 2016 |
Ordering Information
| Product | Status | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MMRF1317HR5 | Active | 1030 | 1090 | 50 | 61.1 | 1300 | 1500 @ Peak | Pulse | 18.9 @ 1030 | 56 | 0.019 | I/O | AB | LDMOS | |
| MMRF1317HSR5 | Active | 1030 | 1090 | 50 | 61.1 | 1300 | 1500 @ Peak | Pulse | 18.9 @ 1030 | 56 | 0.019 | I/O | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | PPT (°C) |
|---|---|---|---|---|---|---|---|
| NI-1230 | 98ASB16977C | MPQ - 50 REELPOQ - 50 BOX | Active | MMRF1317HR5 | MMRF1317HR5.pdf |   | 260 |
| NI-1230S | 98ARB18247C | MPQ - 50 REELPOQ - 50 BOX | Active | MMRF1317HSR5 | MMRF1317HSR5.pdf | | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- AN1908 - Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages MMRF1317H
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Aerospace and Defense Solutions Brochure MMRF5300N
- RF Products Selector Guide MMT20303H
- RF Military High Power Avionics Devices MMRF2010N
- 98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
- MMRF1317HR5.pdf MMRF1317H
- 98ARB18247C, NI-C, 32.26x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
- MMRF1317HSR5.pdf MMRF1317H
