MMRF2007N: 136-940 MHz, 35 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers
TO-270WBL-16, TO-270WBLG-16 Package Images
特性
- Characterized with series equivalent large-signal impedance parameters and common source S-parameters
- On-chip prematching. On-chip stabilization.
- Integrated quiescent current temperature compensation with enable/disable function
- Integrated ESD protection
- RoHS compliant
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| 136-940 MHz, 35 W Avg, 28 V RF LDMOS Integrated Power Amplifier Data Sheet (REV 0) PDF (349.2 kB) MMRF2007N | 19 Jun 2015 |
Application Notes (3)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
| Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN1987 | 12 May 2004 |
| Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN1977 | 09 Oct 2003 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Brochures (1)
| Name/Description | Modified Date |
|---|---|
| RF Aerospace and Defense Solutions Brochure (REV 4.1) PDF (1.6 MB) BR1611 | 16 May 2016 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (2)
| Name/Description | Modified Date |
|---|---|
| 98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins (REV E) PDF (77.7 kB) 98ASA10739D | 18 Mar 2016 |
| 98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins (REV E) PDF (82.7 kB) 98ASA10740D | 18 Mar 2016 |
Ordering Information
| Product | Status | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MMRF2007GNR1 | Active | 136 | 940 | 28 | 49 | 79 | 35 @ AVG | 2-Tone | 32.6 @ 940 | 42.1 | 0.6 | I/O | AB | LDMOS | |
| MMRF2007NR1 | Active | 136 | 940 | 28 | 49 | 79 | 35 @ AVG | 2-Tone | 32.6 @ 940 | 42.1 | 0.6 | I/O | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | MSL | PPT (°C) |
|---|---|---|---|---|---|---|---|---|
| TO-270-WBL 16 GULLWG PLS | 98ASA10740D | MPQ - 500 REELPOQ - 500 REEL | Active | MMRF2007GNR1 | MMRF2007GNR1.pdf |  | 3 | 260 |
| TO-270 WBL 16 PLASTIC | 98ASA10739D | MPQ - 500 REELPOQ - 500 REEL | Active | MMRF2007NR1 | MMRF2007NR1.pdf | | 3 | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 MMRF2010N
- Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 MMRF2010N
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Aerospace and Defense Solutions Brochure MMRF5300N
- RF Products Selector Guide MMT20303H
- 98ASA10740D, TO, 23.62x9.02x3.18, Pitch 1.02, 17 Pins MMRF2007N
- MMRF2007GNR1.pdf MMRF2007N
- 98ASA10739D, TO-WBL, 23.55x9.05x3.17, Pitch 9.02, 16 Pins MMRF2007N
- MMRF2007NR1.pdf MMRF2007N
