MMRF5013N: 1-3000 MHz, 12 W CW, 50 V Wideband RF Power GaN on SiC Transistor

The MMRF5013N 12 W CW RF power GaN transistor is optimized for wideband operation up to 3000 MHz and includes input matching for extended bandwidth performance. With its high gain and high ruggedness, this device is ideally suited for CW, pulse and wideband RF applications.

For additional information and sample availability contact RFMIL@nxp.com.

OM-270-8 Package Image

特性

Decade bandwidth performance
Plastic package enables improved thermal resistance
Advanced GaN on SiC, offering high power density
Input matched for extended wideband performance
High ruggedness: > 20:1 VSWR
Wideband reference circuit for 200-2600 MHz
RoHS Compliant

特性

Ideal for military end-use applications, including the following:
- Narrowband and multi-octave wideband amplifiers
- Radar
- Jammers
- EMC testing
Narrowband and multi-octave wideband amplifiers
Radar
Jammers
EMC testing
Also suitable for commercial applications, including the following:
- Public mobile radios, including emergency service radios
- Industrial, scientific and medical
- Wideband laboratory amplifiers
- Wireless cellular infrastructure
Public mobile radios, including emergency service radios
Industrial, scientific and medical
Wideband laboratory amplifiers
Wireless cellular infrastructure