MRF1550N: 175 MHz, 50 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs

TO-272-6 Wrap, TO-272-6 Package Image
特性
  • Specified Performance @ 175 MHz, 12.5 Volts Output Power: 50 Watts Power Gain: 14.5 dB Efficiency: 55%
  • Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 175 MHz, 2 dB Overdrive
  • Excellent Thermal Stability
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Broadband–Full Power Across the Band: 135–175 MHz
  • 200°C Capable Plastic Package
  • N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
  • In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
MRF1550NT1, MRF1550FNT1, 175 MHz, 50 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs (REV 15) PDF (472.5 kB) MRF1550N19 Jun 2009
Application Notes (3)
Name/DescriptionModified Date
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN378912 Mar 2009
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (8.2 MB) AN326307 Jun 2006
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Fact Sheets (1)
Name/DescriptionModified Date
RFLANDMBFS: RF Mobile Radio Solutions - Fact Sheet (REV 2) PDF (364.6 kB) RFLANDMBFS20 Mar 2014
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
White Papers (1)
Name/DescriptionModified Date
Designing with Plastic RF Power Transistors White Paper (REV 2) PDF (894.1 kB) RFPLASTICWP24 Sep 2015
Package Information (2)
Name/DescriptionModified Date
98ASA10536D, TO, 12.6x23.62x2.59, Pitch 4.9, 6 Pins (REV E) PDF (70.8 kB) 98ASA10536D23 Feb 2016
98ASH98116A, 1264-10, TO-272, 6 Lead (REV L) PDF (48.6 kB) 98ASH98116A03 Aug 2007
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MRF1550NT1Not Recommended for New Design13652012.5475050 @ CW1-Tone14.5 @ 175550.5UnmatchedABLDMOS
MRF1550FNT1Not Recommended for New Design13652012.5475050 @ CW1-Tone14.5 @ 175550.5UnmatchedABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
TO-272-6 WRAP98ASH98116AMPQ - 500 REELPOQ - 500 BOXNot Recommended for New DesignMRF1550NT1MRF1550NT1.pdf3260
TO-272-698ASA10536DMPQ - 500 REELPOQ - 500 BOXNot Recommended for New DesignMRF1550FNT1MRF1550FNT1.pdf3260
MRF1550NT1, MRF1550FNT1, 175 MHz, 50 W, 12.5 V Lateral N-Channel Broadband RF Power MOSFETs mrf1550n
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RFLANDMBFS: RF Mobile Radio Solutions - Fact Sheet mrf1570n
RF Products Selector Guide MMT20303H
Designing with Plastic RF Power Transistors White Paper mrf1570n
98ASH98116A, 1264-10, TO-272, 6 Lead mrf1550n
MRF1550NT1.pdf MRF1550N
98ASA10536D, TO, 12.6x23.62x2.59, Pitch 4.9, 6 Pins mrf1550n
MRF1550FNT1.pdf MRF1550N
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