MRF6P24190HR6: 2450 MHz, 190 W, 28 V CW Lateral N-Channel RF Power MOSFET

NI-1230 Package Image
特性
  • Typical CW Performance at 2450 MHz: VDD = 28 Volts, IDQ = 1900 mA, Pout = 190 Watts Power Gain: 13.2 dB Drain Efficiency: 46.2%
  • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW Output Power
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
MRF6P24190HR6 2450 MHz, 190 W, 28 V CW Lateral N-Channel RF Power MOSFET (REV 3) PDF (373.9 kB) MRF6P24190H23 Feb 2009
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Brochures (1)
Name/DescriptionModified Date
Industrial, Scientific and Medical Solutions Brochure (REV 9) PDF (1.2 MB) BR159303 Oct 2014
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (1)
Name/DescriptionModified Date
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C05 Apr 2016
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MRF6P24190HR6Not Recommended for New Design240025002852.8190190 @ CW1-Tone13.2 @ 245046.20.22I/OABLDMOS
MRF6P24190HR5No Longer Manufactured240025002852.8190190 @ CW1-Tone13.2 @ 245046.20.22I/OABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-123098ASB16977CMPQ - 150 REELPOQ - 150 REELNot Recommended for New DesignMRF6P24190HR6MRF6P24190HR6.pdf260
No Longer ManufacturedMRF6P24190HR5MRF6P24190HR5.pdf260
MRF6P24190HR6 2450 MHz, 190 W, 28 V CW Lateral N-Channel RF Power MOSFET mrf6p24190hr6
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
Industrial, Scientific and Medical Solutions Brochure mw7ic2425n
RF Products Selector Guide MMT20303H
98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
MRF6P24190HR6.pdf MRF6P24190HR6
MRF6P24190HR5.pdf MRF6P24190HR6