MRF6V12250H: 960-1215 MHz, 275 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs
NI-780, NI-780S Package Image
特性
- Typical Pulsed Performance: VDD = 50 Volts, IDQ = 100 mA, Pout = 275 Watts Peak (27.5 W Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10% Power Gain: 20.3 dBDrain Efficiency: 65.5%
- Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 275 Watts Peak Power
- Typical Broadband Performance: VDD = 50 Volts, IDQ = 100 mA, Pout = 250 Watts Peak (25 Watts Avg.), f = 960–1215 MHz, Pulse Width = 128 µsec, Duty Cycle = 10% Power Gain: 19.8 dBDrain Efficiency: 58%
- Characterized with Series Equivalent Large–Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- RoHS Compliant
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
- These products are included in Our product longevity program with assured supply for a minimum of 10 years after launch.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MRF6V12250HR3, MRF6V12250HSR3 960-1215 MHz, 275 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs (REV 2) PDF (1.3 MB) MRF6V12250H | 28 Apr 2010 |
Application Notes (1)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Brochures (1)
| Name/Description | Modified Date |
|---|---|
| RF Solutions for Commercial Aerospace (REV 2) PDF (1.8 MB) BR1608 | 04 Sep 2015 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
White Papers (1)
| Name/Description | Modified Date |
|---|---|
| 50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications (REV 4) PDF (914.5 kB) 50VRFLDMOSWP | 08 Sep 2011 |
Package Information (2)
| Name/Description | Modified Date |
|---|---|
| 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins (REV H) PDF (44.1 kB) 98ASB15607C | 22 Mar 2016 |
| 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins (REV J) PDF (43.5 kB) 98ASB16718C | 22 Mar 2016 |
Ordering Information
| Product | Status | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MRF6V12250HR5 | Active | 960 | 1215 | 50 | 54.4 | 275 | 275 @ Peak | Pulse | 20.3 @ 1030 | 65.5 | 0.08 | I/O | AB | LDMOS | |
| MRF6V12250HSR5 | Active | 960 | 1215 | 50 | 54.4 | 275 | 275 @ Peak | Pulse | 20.3 @ 1030 | 65.5 | 0.08 | I/O | AB | LDMOS | |
| MRF6V12250HSR3 | No Longer Manufactured | 960 | 1215 | 50 | 54.4 | 275 | 275 @ Peak | Pulse | 20.3 @ 1030 | 65.5 | 0.08 | I/O | AB | LDMOS | |
| MRF6V12250HR3 | No Longer Manufactured | 960 | 1215 | 50 | 54.4 | 275 | 275 @ Peak | Pulse | 20.3 @ 1030 | 65.5 | 0.08 | I/O | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | PPT (°C) |
|---|---|---|---|---|---|---|---|
| NI-780 | 98ASB15607C | MPQ - 50 REELPOQ - 50 REEL | Active | MRF6V12250HR5 | MRF6V12250HR5.pdf |   | 260 |
| Migration Complete. No Longer Manufactured. View PCN and Replacement Part Migration Complete. No Longer Manufactured. View PCN and Replacement Part | MRF6V12250HR3 | MRF6V12250HR3.pdf | | 260 | |||
| NI-780S | 98ASB16718C | MPQ - 50 REELPOQ - 50 REEL | Active | MRF6V12250HSR5 | MRF6V12250HSR5.pdf | | 260 |
| Migration Complete. No Longer Manufactured. View PCN and Replacement Part Migration Complete. No Longer Manufactured. View PCN and Replacement Part | MRF6V12250HSR3 | MRF6V12250HSR3.pdf | | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Solutions for Commercial Aerospace mrfe6vs25n
- RF Products Selector Guide MMT20303H
- 50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications mrfe6vp8600h
- 98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins MMRF1011H
- MRF6V12250HR5.pdf MRF6V12250H
- MRF6V12250HR3.pdf MRF6V12250H
- 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins MMRF1011H
- MRF6V12250HSR5.pdf MRF6V12250H
- MRF6V12250HSR3.pdf MRF6V12250H
