MRF6V2150N: 10-450 MHz, 150 W, 50 V Wideband RF Power LDMOS Transistors
TO-270WB-4, TO-272WB-4 Package Images
特性
- Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA, Pout = 150 Watts Power Gain: 25 dB Drain Efficiency: 68.3%
- Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts Output Power
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- 225°C Capable Plastic Package
- RoHS Compliant
- In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MRF6V2150NR1, MRF6V2150NBR1, 10-450 MHz, 150 W, 50 V Lateral N-Channel Single-Ended Broadband RF Power MOSFETs (REV 4) PDF (1.5 MB) MRF6V2150N | 28 Apr 2010 |
Application Notes (4)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
| AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 | 13 May 2009 |
| Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 | 12 Mar 2009 |
| Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (8.2 MB) AN3263 | 07 Jun 2006 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Brochures (2)
| Name/Description | Modified Date |
|---|---|
| Industrial, Scientific and Medical Solutions Brochure (REV 9) PDF (1.2 MB) BR1593 | 03 Oct 2014 |
| Broadcast Solutions (REV 5) PDF (818.6 kB) BR1607 | 08 Sep 2011 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
White Papers (2)
| Name/Description | Modified Date |
|---|---|
| Designing with Plastic RF Power Transistors White Paper (REV 2) PDF (894.1 kB) RFPLASTICWP | 24 Sep 2015 |
| 50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications (REV 4) PDF (914.5 kB) 50VRFLDMOSWP | 08 Sep 2011 |
Package Information (2)
| Name/Description | Modified Date |
|---|---|
| 98ASA10575D, TO, 23.0x8.0x2.59, Pitch 12.0, 4 Pins (REV F) PDF (73.4 kB) 98ASA10575D | 17 Mar 2016 |
| 98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins (REV F) PDF (75.9 kB) 98ASA10577D | 18 Jan 2016 |
Ordering Information
| Product | Status | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MRF6V2150NR1 | Active | 10 | 450 | 50 | 51.8 | 150 | 150 @ CW | 1-Tone | 25 @ 220 | 68.3 | 0.24 | Unmatched | AB | LDMOS | |
| MRF6V2150NBR1 | Active | 10 | 450 | 50 | 51.8 | 150 | 150 @ CW | 1-Tone | 25 @ 220 | 68.3 | 0.24 | Unmatched | AB | LDMOS | |
| MRF6V2150NBR5 | Not Recommended for New Design | 10 | 450 | 50 | 51.8 | 150 | 150 @ CW | 1-Tone | 25 @ 220 | 68.3 | 0.24 | Unmatched | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | MSL | PPT (°C) |
|---|---|---|---|---|---|---|---|---|
| TO-272 WB-4 | 98ASA10575D | MPQ - 500 REELPOQ - 500 BOX | Active | MRF6V2150NBR1 | MRF6V2150NBR1.pdf |  | 3 | 260 |
| MPQ - 50 REELPOQ - 50 BOX | Not Recommended for New Design | MRF6V2150NBR5 | MRF6V2150NBR5.pdf | | 3 | 260 | ||
| TO-270 WB-4 | 98ASA10577D | MPQ - 500 REELPOQ - 500 BOX | Active | MRF6V2150NR1 | MRF6V2150NR1.pdf | | 3 | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
- Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
- Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- Industrial, Scientific and Medical Solutions Brochure mw7ic2425n
- Broadcast Solutions mrfe6vp8600h
- RF Products Selector Guide MMT20303H
- Designing with Plastic RF Power Transistors White Paper mrf1570n
- 50V RF LDMOS: Power Technology for ISM, Broadcast, and Commercial Aerospace Applications mrfe6vp8600h
- 98ASA10575D, TO, 23.0x8.0x2.59, Pitch 12.0, 4 Pins MMRF1018N
- MRF6V2150NBR1.pdf MRF6V2150N
- MRF6V2150NBR5.pdf MRF6V2150N
- 98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins aft09mp055n
- MRF6V2150NR1.pdf MRF6V2150N
