MRF8VP13350N: 700-1300 MHz, 350 W CW, 50 V RF Power LDMOS Transistors

OM-780-4L, OM-780G-4L Package Image
特性
  • Internally input matched for ease of use
  • Device can be used single-ended or in a push-pull configuration
  • Qualified up to a maximum of 50 VDD operation
  • Suitable for linear application with appropriate biasing
  • Integrated ESD protection
  • RoHS Compliant
特性
  • 915 MHz industrial heating/welding systems
  • 1300 MHz particle accelerators
  • 900 MHz TETRA base stations
Data Sheets (1)
Name/DescriptionModified Date
MRF8VP13350N 700–1300 MHz, 350 W CW, 50 V RF Power LDMOS Transistors (REV 1) PDF (677.4 kB) MRF8VP13350N15 Oct 2015
Application Notes (2)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (2)
Name/DescriptionModified Date
98ASA10833D, OMNI, 20.57x9.78x3.81, Pitch 8.89, 5 Pins (REV B) PDF (69.8 kB) 98ASA10833D22 Mar 2016
98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins (REV E) PDF (76.8 kB) 98ASA10834D22 Mar 2016
Supporting Information (1)
Name/DescriptionModified Date
New NXP® RF Industrial Transistor (REV 0) PDF (421.7 kB) MRF8VP13350N_TRN_SL05 May 2015
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MRF8VP13350GNR3Active70013005055.4350350 @ CWCW20.7 @ 91567.50.04InputABLDMOS
MRF8VP13350NR3Active70013005055.4350350 @ CWCW20.7 @ 91567.50.04InputABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
OM780-4 GULL PLASTIC98ASA10834DMPQ - 250 REELPOQ - 250 BOXActiveMRF8VP13350GNR3MRF8VP13350GNR3.pdf3260
OM780-4 PLASTIC98ASA10833DMPQ - 250 REELPOQ - 250 BOXActiveMRF8VP13350NR3MRF8VP13350NR3.pdf3260
MRF8VP13350N 700–1300 MHz, 350 W CW, 50 V RF Power LDMOS Transistors mrf8vp13350n
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
New NXP® RF Industrial Transistor mrf8vp13350n
98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins MMRF1020-04N
MRF8VP13350GNR3.pdf MRF8VP13350N
98ASA10833D, OMNI, 20.57x9.78x3.81, Pitch 8.89, 5 Pins MMRF1020-04N
MRF8VP13350NR3.pdf MRF8VP13350N