MRFE6VP6600N: 1.8-600 MHz, 600 W CW, 50 V Wideband RF Power LDMOS Transistors

Unmatched Input and Output Allowing Wide Frequency Range Utilization
Device can be used Single-Ended or in a Push-Pull Configuration
Qualified Up to a Maximum of 50 VDD Operation
Characterized from 30 to 50 V for Extended Power Range
Suitable for Linear Application with Appropriate Biasing
Integrated ESD Protection with Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Characterized with Series Equivalent Large-Signal Impedance Parameters
Recommended drivers: AFT05MS004N (4 W) or MRFE6VS25N (25 W)
RoHS Compliant

Name/Description	Modified Date
MRFE6VP6600N 600 W CW over 1.8-600 MHz RF Power Data Sheet (REV 0) PDF (1.2 MB) MRFE6VP6600N	26 May 2015

Name/Description	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955	29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907	13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789	12 Mar 2009

Name/Description	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212	19 Jan 2004

Name/Description	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46	26 May 2016

Name/Description	Modified Date
Designing with Plastic RF Power Transistors White Paper (REV 2) PDF (894.1 kB) RFPLASTICWP	24 Sep 2015

Name/Description	Modified Date
98ASA10833D, OMNI, 20.57x9.78x3.81, Pitch 8.89, 5 Pins (REV B) PDF (69.8 kB) 98ASA10833D	22 Mar 2016
98ASA10834D, OMNI, 20.57x9.96x3.81, Pitch 8.89, 5 Pins (REV E) PDF (76.8 kB) 98ASA10834D	22 Mar 2016

MRFE6VP6600N 230 MHz PCB DXF file (REV 0) ZIP MRFE6VP6600N_230_PCB 5/26/2015
MRFE6VP6600N 87.5-108 MHz PCB DXF file (REV 0) ZIP MRFE6VP6600N_87P5_108_PCB 5/26/2015

Product	Status	Status	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	Supply Voltage (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	Output Power (Typ) (W) @ Intermodulation Level at Test Signal	Test Signal	Power Gain (Typ) (dB) @ f (MHz)	Efficiency (Typ) (%)	Thermal Resistance (Spec)(°C/W)	Matching	Class	Die Technology
MRFE6VP6600GNR3	Active		1.8	600	50	57.8	600	600 @ CW	CW	24 @ 98	81		Unmatched	AB	LDMOS
MRFE6VP6600NR3	Active		1.8	600	50	57.8	600	600 @ CW	CW	24 @ 98	81		Unmatched	AB	LDMOS

Package Description	Outline Version	Packing	Product Status	Part Number	Chemical Content	RoHS / Pb FreeChina RoHS Lookup	MSL	PPT (°C)
OM-780G-4L	98ASA10834D	MPQ - 250 REELPOQ - 250 BOX	Active	MRFE6VP6600GNR3	MRFE6VP6600GNR3.pdf		3	260
OM-780-4	98ASA10833D	MPQ - 250 REELPOQ - 250 BOX	Active	MRFE6VP6600NR3	MRFE6VP6600NR3.pdf		3	260