NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.
PNP complement: PBSS5330PA.
Name/Description | Modified Date |
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30 V, 3 A NPN low VCEsat (BISS) transistor (REV 2.0) PDF (216.0 kB) PBSS4330PA [English] | 07 Apr 2015 |
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Next generation of NXP® low VCEsat transistors: improved technology for discrete semiconductors (REV 3.0) PDF (1.3 MB) AN11045 [English] | 04 Mar 2013 |
Thermal behavior of small-signal discretes on multilayer PCBs (REV 1.0) PDF (211.0 kB) AN11076 [English] | 12 Jul 2011 |
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DFN2020-3: plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 2 x 2 x 0.65 mm (REV 1.0) PDF (185.0 kB) SOT1061 [English] | 08 Feb 2016 |
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DFN2020-3; reel pack; standard product orientation; 12NC ending 115 (REV 1.0) PDF (261.0 kB) SOT1061_115 [English] | 07 Nov 2012 |
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PBSS4330PA NXP Product Quality (REV 1.2) PDF (74.0 kB) PBSS4330PA_NXP_PRODUCT_QUALITY [English] | 31 Jan 2015 |
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Reflow Soldering Profile (REV 1.0) PDF (34.0 kB) REFLOW_SOLDERING_PROFILE [English] | 30 Sep 2013 |
Product | Status | Package version | Package name | Size (mm) | transistor polarity | Transistor polarity | number of transistors | Ptot [max] (mW) | VCEO [max] (V) | IC [max] (A) | ICM [max] (A) | hFE [min] | hFE [typ] | fT [min] (MHz) | fT [typ] (MHz) | RCEsat [typ] (mΩ) | RCEsat [max] (mΩ) | VCEsat [max] (mV) |
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PBSS4330PA | Active | SOT1061 | DFN2020-3 | 2 x 2 x 0.65 | NPN | 1 | 2100 | 30 | 3 | 5 | 300 | 465 | 100 | 210 | 75 | 100 | 300 |
Product ID | Package Description | Outline Version | Reflow/Wave Soldering | Packing | Product Status | Part NumberOrdering code(12NC) | Marking | Chemical Content | RoHS / Pb Free / RHF | LeadFree Conversion Date | EFR | IFR(FIT) | MTBF(hour) | MSL | MSL LF |
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PBSS4330PA | SOT1061 | Reflow_Soldering_Profile | Reel 7" Q1/T1 | Active | PBSS4330PA,115 (9340 642 72115) | AH | PBSS4330PA | Always Pb-free | 153.0 | 0.71 | 1.41E9 | 1 | 1 |