PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
NPN complement: PBSS4130QA.
Name/Description | Modified Date |
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30 V, 1 A PNP low VCEsat (BISS) transistor (REV 1.0) PDF (239.0 kB) PBSS5130QA | 28 Aug 2013 |
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NXP® MOSFETs and bipolar transistors in DFN1010; Small and Powerful (REV 1.0) PDF (1.8 MB) 75017485 | 04 Nov 2013 |
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DFN1010D-3: plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 1.1 x 1.0 x 0.37 mm (REV 1.0) PDF (191.0 kB) SOT1215 | 08 Feb 2016 |
Name/Description | Modified Date |
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PBSS5130QA NXP Product Quality (REV 1.2) PDF (74.0 kB) PBSS5130QA_NXP_PRODUCT_QUALITY | 31 Jan 2015 |
PBSS5130QA NXP® Product Reliability (REV 1.0) PDF (87.0 kB) PBSS5130QA_1 | 16 Jul 2014 |
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Reflow Soldering Profile (REV 1.0) PDF (34.0 kB) REFLOW_SOLDERING_PROFILE | 30 Sep 2013 |
Product | Status | Package version | Package name | Size (mm) | Transistor polarity | transistor polarity | number of transistors | Ptot [max] (mW) | VCEO [max] (V) | IC [max] (A) | ICM [max] (A) | hFE [min] | hFE [typ] | fT [min] (MHz) | fT [typ] (MHz) | RCEsat [typ] (mΩ) | RCEsat [max] (mΩ) | VCEsat [max] (mV) |
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PBSS5130QA | Active | SOT1215 | DFN1010D-3 | 1.1 x 1.0 x 0.37 | PNP | 1 | 325 | -30 | -1 | -1.5 | 250 | 425 | 120 | 170 | 160 | 240 | -130 |
Product ID | Package Description | Outline Version | Reflow/Wave Soldering | Packing | Product Status | Part NumberOrdering code(12NC) | Marking | Chemical Content | RoHS / Pb Free / RHF | LeadFree Conversion Date | EFR | IFR(FIT) | MTBF(hour) | MSL | MSL LF |
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PBSS5130QA | SOT1215 | Reflow_Soldering_Profile | Reel 7" Q2/T3 | Active | PBSS5130QAZ (9340 671 67147) | 00 10 10 | PBSS5130QA | Always Pb-free | 153.0 | 0.71 | 1.41E9 | 1 | 1 | ||
Reel 7" Q1/T1 | Withdrawn | PBSS5130QAX (9340 671 67115) | 00 10 10 | PBSS5130QA | Always Pb-free | 153.0 | 0.71 | 1.41E9 | 1 | 1 |