NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package.
PNP complement: PBSS9110X.
Name/Description | Modified Date |
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100 V, 1 A NPN low VCEsat (BISS) transistor (REV 2.0) PDF (206.0 kB) PBSS8110X | 25 Jan 2010 |
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Thermal behavior of small-signal discretes on multilayer PCBs (REV 1.0) PDF (211.0 kB) AN11076 | 12 Jul 2011 |
Increased circuit efficiency, less required board space and saved money by replacing power transistors with low VCEsat... (REV 1.0) PDF (400.0 kB) AN10405 | 06 Jan 2006 |
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plastic surface-mounted package; die pad for good heat transfer; 3 leads (REV 1.0) PDF (193.0 kB) SOT89 | 08 Feb 2016 |
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Tape reel SMD; standard product orientation 12NC ending 135 (REV 1.0) PDF (178.0 kB) SOT89_135 | 28 Nov 2012 |
Name/Description | Modified Date |
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PBSS8110X NXP® Product Reliability (REV 1.1) PDF (82.0 kB) PBSS8110X_1 | 31 Jan 2015 |
PBSS8110X NXP Product Quality (REV 1.2) PDF (74.0 kB) PBSS8110X_NXP_PRODUCT_QUALITY | 31 Jan 2015 |
Product | Status | Package version | Package name | Size (mm) | Transistor polarity | transistor polarity | number of transistors | Ptot [max] (mW) | VCEO [max] (V) | IC [max] (A) | ICM [max] (A) | hFE [min] | hFE [typ] | fT [typ] (MHz) | fT [min] (MHz) | RCEsat [typ] (mΩ) | VCEsat [max] (mV) | RCEsat [max] (mΩ) |
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PBSS8110X | Active | SOT89 | SOT89 | 4.5 x 2.5 x 1.5 | NPN | 1 | 550 | 100 | 1 | 3 | 150 | 100 | 165 | 200 | 200 |
Product ID | Package Description | Outline Version | Reflow/Wave Soldering | Packing | Product Status | Part NumberOrdering code(12NC) | Marking | Chemical Content | RoHS / Pb Free / RHF | LeadFree Conversion Date | EFR | IFR(FIT) | MTBF(hour) | MSL | MSL LF |
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PBSS8110X | SOT89 | Reel 11¼" Q1/T1 in LargePack | Active | PBSS8110X,135 (9340 579 75135) | K | PBSS8110X | Always Pb-free | 153.0 | 0.71 | 1.41E9 | 1 | 1 |