PMV30XPEA: 20 V, P-channel Trench MOSFET

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

SOT023
Data Sheets (1)
Name/DescriptionModified Date
20 V, P-channel Trench MOSFET (REV 1.0) PDF (256.0 kB) PMV30XPEA30 Oct 2015
Application Notes (6)
Name/DescriptionModified Date
Using power MOSFETs in parallel (REV 1.0) PDF (184.0 kB) AN1159913 Jul 2016
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.6 MB) AN11113_ZH22 May 2014
Using RC Thermal Models (REV 2.0) PDF (1.0 MB) AN1126119 May 2014
LFPAK MOSFET thermal design guide, Chinese version (REV 1.0) PDF (515.0 kB) AN10874_ZH14 Sep 2012
LFPAK MOSFET thermal design guide - Part 2 (REV 2.0) PDF (2.5 MB) AN1111316 Nov 2011
LFPAK MOSFET thermal design guide (REV 2.0) PDF (401.0 kB) AN1087427 Jan 2011
Selector Guides (1)
Name/DescriptionModified Date
Discretes Semiconductors Selection Guide 2016 (REV 1.0) PDF (47.9 MB) 7501763117 Feb 2016
Package Information (1)
Name/DescriptionModified Date
plastic surface-mounted package; 3 leads (REV 1.0) PDF (213.0 kB) SOT2308 Feb 2016
Packing (1)
Name/DescriptionModified Date
Tape reel SMD; standard product orientation 12NC ending 215 (REV 1.0) PDF (202.0 kB) SOT23_21516 Nov 2012
Supporting Information (3)
Name/DescriptionModified Date
Power MOSFET frequently asked questions and answers (REV 2.0) PDF (1.6 MB) TN0000831 Oct 2016
Reflow Soldering Profile (REV 1.0) PDF (34.0 kB) REFLOW_SOLDERING_PROFILE30 Sep 2013
Wave Soldering Profile (REV 1.0) PDF (20.0 kB) WAVE_SOLDERING_PROFILE30 Sep 2013
Ordering Information
ProductStatusPackage versionPackage nameChannel typeNumber of transistorsVDS [max] (V)RDSon [max] @ VGS = 10 V (mΩ)RDSon [max] @ VGS = 5 V (mΩ)RDSon [max] @ VGS = 4.5 V (mΩ)RDSon [max] @ VGS = 2.5 V (mΩ)ID [max] (A)QGD [typ] (nC)QG(tot) [typ] @ VGS = 4.5 V (nC)QG(tot) [typ] (nC)RDSon [typ] @ VGS = 4.5 V (mΩ)QG(tot) [typ] @ VGS = 10 V (nC)Ptot [max] (W)RDSon [typ] @ VGS = 2.5 V (mΩ)Qr [typ] (nC)VGSth [typ] (V)Automotive qualifiedID [max] @ T = 100 °C (A)Ciss [typ] (pF)IDM [max] (A)Coss [typ] (pF)DateRth(j-mb) [max] (K/W)
PMV30XPEAActiveSOT23TO-236ABP1-203457-5.321111280.4942-1Y-2.81465-181932015-10-301465
Package Information
Product IDPackage DescriptionOutline VersionReflow/Wave SolderingPackingProduct StatusPart NumberOrdering code(12NC)MarkingChemical ContentRoHS / Pb Free / RHFLeadFree Conversion DateEFRIFR(FIT)MTBF(hour)MSLMSL LF
PMV30XPEASOT23Reflow_Soldering_Profile Wave_Soldering_Profile
Reflow_Soldering_Profile Wave_Soldering_Profile
Reel 7" Q3/T4ActivePMV30XPEAR (9340 687 09215)DM%PMV30XPEAAlways Pb-free234.01.089.26E811
20 V, P-channel Trench MOSFET pmv30xpea
Using power MOSFETs in parallel BUK7M12-60E
LFPAK MOSFET thermal design guide - Part 2 BUK7K8R7-40E
Using RC Thermal Models BUK7M12-60E
LFPAK MOSFET thermal design guide, Chinese version BUK7K8R7-40E
LFPAK MOSFET thermal design guide - Part 2 BUK7M12-60E
LFPAK MOSFET thermal design guide BUK7M12-60E
Discretes Semiconductors Selection Guide 2016 BUK7M12-60E
Power MOSFET frequently asked questions and answers BUK7M12-60E
plastic surface-mounted package; 3 leads BSS84AK
Reflow_Soldering_Profile Wave_Soldering_Profile LPC1112FD20
Reflow_Soldering_Profile Wave_Soldering_Profile LPC1112FD20
Tape reel SMD; standard product orientation 12NC ending 215 BSS84AK
PMBFJ309