BGU8L1UK: SiGe:C Low Noise Amplifier MMIC for LTE

The BGU8L1UK is a Low Noise Amplifier (LNA) for LTE receiver applications. It comes as an extremely small and thin Wafer Level Chip Scale Package (WLCSP). The BGU8L1UK requires one external matching inductor.

The BGU8L1UK adapts itself to the changing environment resulting from co-habitation of different radio systems in modern cellular handsets. It has been designed for low power consumption and optimal performance. At low jamming power levels it delivers 16 dB gain at a noise figure of 0.7 dB. During high power levels, it temporarily increases its bias current to improve sensitivity.

The BGU8L1UK is optimized for 728 MHz to 960 MHz.

Data Sheets (1)
Name/DescriptionModified Date
SiGe:C Low Noise Amplifier MMIC for LTE (REV 1.0) PDF (203.0 kB) BGU8L1UK19 May 2015
Application Notes (1)
Name/DescriptionModified Date
BGU8L1UK LTE LNA evaluation board (REV 1.0) PDF (720.0 kB) AN1159613 Nov 2014
S-Parameters
Ordering Information
ProductStatusPackage version@VCC [min] (V)@VCC [max] (V)@ICC [typ] (mA)Gp [typ] (dB)NF [typ] (dB)Pi(1dB) [min] (dBm)IP3i [min] (dBm)IP3i [typ] (dBm)@VCC (V)Pi(1dB) [typ] (dBm)@f (MHz)
BGU8L1UKActiveNAU0001.53.1160.7-6882
Package Information
Product IDPackage DescriptionOutline VersionReflow/Wave SolderingPackingProduct StatusPart NumberOrdering code(12NC)MarkingChemical ContentRoHS / Pb Free / RHFLeadFree Conversion DateMSLMSL LF
BGU8L1UKReel 13" Q1/T1 in DrypackActiveBGU8L1UKAZ (9340 690 76019)Standard MarkingBGU8L1UKAlways Pb-free11
SiGe:C Low Noise Amplifier MMIC for LTE BGU8L1UK
BGU8L1UK LTE LNA evaluation board BGU8L1UK
BGU8L1UK S-parameter and Noise BGU8L1UK