MRFE6P3300H: 470-860 MHz, 300 W, 32 V Lateral N-Channel RF Power MOSFET

NI-860C3 Package Image
特性
  • Typical Narrowband Two-Tone Performance @ 860 MHz, VDD = 32 Volts, IDQ = 1600 mA, Pout = 270 Watts PEP Power Gain: 20.4 dB Drain Efficiency: 44.8% IMD: –28.8 dBc
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Designed for Push-Pull Operation Only
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
MRFE6P3300HR3 860 MHz, 300 W, 32 V Lateral N-Channel Broadband RF Power MOSFET (REV 2) PDF (456.5 kB) MRFE6P3300H30 Dec 2009
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Brochures (1)
Name/DescriptionModified Date
Broadcast Solutions (REV 5) PDF (818.6 kB) BR160708 Sep 2011
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (1)
Name/DescriptionModified Date
98ARH99040A, NI-C, 34.04x9.78x5.13, Pitch 10.8, 5 Pins (REV J) PDF (53.2 kB) 98ARH99040A19 Jun 2016
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MRFE6P3300HR3Active4708603254.8300270 @ PEP2-Tone20.4 @ 86044.80.23I/OABLDMOS
MRFE6P3300HR5No Longer Manufactured4708603254.8300270 @ PEP2-Tone20.4 @ 86044.80.23I/OABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-860C398ARH99040AMPQ - 250 REELPOQ - 250 BOXActiveMRFE6P3300HR3MRFE6P3300HR3.pdf260
No Longer ManufacturedMRFE6P3300HR5MRFE6P3300HR5.pdf260
MRFE6P3300HR3 860 MHz, 300 W, 32 V Lateral N-Channel Broadband RF Power MOSFET mrfe6p3300h
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
Broadcast Solutions mrfe6vp8600h
RF Products Selector Guide MMT20303H
98ARH99040A, NI-C, 34.04x9.78x5.13, Pitch 10.8, 5 Pins mrfe6p3300h
MRFE6P3300HR3.pdf MRFE6P3300H
MRFE6P3300HR5.pdf MRFE6P3300H