MRFE6VS25L: 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistor

NI-360 Package Image
特性
  • Wide Operating Frequency Range
  • Extremely Rugged
  • Unmatched, Capable of Very Broadband Operation
  • Integrated Stability Enhancements
  • Low Thermal Resistance
  • Extended ESD Protection Circuit
  • RoHS Compliant
  • In Tape and Reel. R5 Suffix = 50 Units, 32 mm Tape Width, 13 inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
MRFE6VS25LR5 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistor - Data Sheet (REV 0) PDF (1.4 MB) MRFE6VS25L01 Oct 2012
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Fact Sheets (1)
Name/DescriptionModified Date
RFWIDEBNDFS: 50V Rugged Wideband LDMOS Transistors – Fact Sheet (REV 0) PDF (337.4 kB) RFWIDEBNDFS18 Jun 2012
Brochures (1)
Name/DescriptionModified Date
RF Solutions for Commercial Aerospace (REV 2) PDF (1.8 MB) BR160804 Sep 2015
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (1)
Name/DescriptionModified Date
98ASB42968B, NI-C, 0.8x0.23x3.81, Pitch 14.2, 3 Pins (REV H) PDF (38.3 kB) 98ASB42968B05 Apr 2016
Supporting Information (1)
Name/DescriptionModified Date
50V Rugged Wideband LDMOS Transistors (REV 0) PDF (778.4 kB) 50VWIDEBAND_TRN_SI15 Jun 2012
Printed Circuit Boards
Ordering Information
ProductStatusStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MRFE6VS25LR5Active1.8200050442525 @ PeakPulse25.9 @ 512741.4UnmatchedABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-36098ASB42968BMPQ - 50 REELPOQ - 50 REELActiveMRFE6VS25LR5MRFE6VS25LR5.pdf260
MRFE6VS25LR5 1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistor - Data Sheet mrfe6vs25l
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RFWIDEBNDFS: 50V Rugged Wideband LDMOS Transistors – Fact Sheet mrfe6vs25n
RF Solutions for Commercial Aerospace mrfe6vs25n
RF Products Selector Guide MMT20303H
50V Rugged Wideband LDMOS Transistors mrfe6vs25n
MRFE6VS25L 1.8-30 MHz Broadband PCB DXF file MRFE6VS25L
MRFE6VS25L 30-512 MHz Broadband PCB DXF file MRFE6VS25L
MRFE6VS25L 512 MHz Narrowband PCB DXF file MRFE6VS25L
98ASB42968B, NI-C, 0.8x0.23x3.81, Pitch 14.2, 3 Pins MMRF1304L
MRFE6VS25LR5.pdf MRFE6VS25L