MRFE8VP8600H: 140 W Avg. over 470-860 MHz, 50 V RF Power LDMOS Transistor
NI-1230H-4S Package Image
特性
- Excellent Thermal Characteristics
- High Gain for Reduced PA Size
- High Efficiency for Class AB and Doherty Operations
- Integrated Input Matching. Unmatched Output.
- Extended Negative Gate-Source Voltage Range of -6.0 Vdc to +10 Vdc
- RoHS Compliant
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MRFE8VP8600H 140 W Avg, 470-860 MHz RF Power LDMOS Transistor Data Sheet (REV 0) PDF (329.2 kB) MRFE8VP8600H | 30 Jul 2015 |
Application Notes (1)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (1)
| Name/Description | Modified Date |
|---|---|
| 98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins (REV G) PDF (47.5 kB) 98ASB16977C | 05 Apr 2016 |
Printed Circuit Boards
- MRFE8VP8600H PCB DXF file (REV 0) ZIP MRFE8VP8600H_PCB 8/3/2015
Ordering Information
| Product | Status | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MRFE8VP8600HR5 | Active | 470 | 860 | 50 | 140 @ AVG | OFDM | 20 @ 810 | 34 | 0.16 | Input | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | PPT (°C) |
|---|---|---|---|---|---|---|---|
| NI-1230 | 98ASB16977C | MPQ - 50 REELPOQ - 50 BOX | Active | MRFE8VP8600HR5 | MRFE8VP8600HR5.pdf |   | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- MRFE8VP8600H PCB DXF file MRFE8VP8600H
- 98ASB16977C, NI-C, 41.15x10.16x4.19, Pitch 13.72, 5 Pins MMRF1317H
- MRFE8VP8600HR5.pdf MRFE8VP8600H
