2N3055: 15 A, 60 V NPN Bipolar Power Transistor

The PNP Bipolar Power Transistor is designed for use in high power amplifier and switching amplifier applications. The 2N3055 (NPN) and MJ2955 (PNP)are complementary devices.

Features
  • DC Current Gain - hFE = 20-70 @ IC = 4 Adc
  • Collector-Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
  • Excellent Safe Operating Area
  • Pb-Free Packages are Available
Packages
Simulation Models (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice model2N3055.LIB (0.0kB)0
Saber model2N3055.SIN (1.0kB)0
Spice 2 model2N3055.SP2 (0.0kB)0
Spice 3 model2N3055.SP3 (0.0kB)0
Package Drawings (1)
Document TitleDocument ID/SizeRevision
TO-204 (TO-3)1-07 (32kB)Z
Data Sheets (1)
Document TitleDocument ID/SizeRevisionRevision Date
Complementary Silicon Power Transistors2N3055/D (70.0kB)6
Order Information
ProductStatusCompliancePackageMSL*ContainerBudgetary Price/Unit
2N3055GActivePb-freeTO-204-21-07NATray Foam100$1.008
Specifications
ProductPolarityTypeVCE(sat) Max (V)IC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
2N3055GNPNGeneral Purpose3 1.1156020702.5115
Complementary Silicon Power Transistors (70.0kB) 2N3055
PSpice model 2N3055
Saber model 2N3055
Spice 2 model 2N3055
Spice 3 model 2N3055
TO-204 (TO-3) 2N6341