2N5884: 25 A, 80 V PNP Bipolar Power Transistor
The Power 25A 80 V Bipolar NPN Transistor is designed for general-purpose power amplifier and switching applications.
Features- Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc
- Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage
- Excellent DC Current Gain hFE = 20 (min) at IC = 10 Adc
- High Current Gain Bandwidth Product ft = 4.0 MHz (min) at IC = 1.0 Adc
- Pb-Free Packages are Available
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Packages
Simulation Models (4)
Package Drawings (1)
Data Sheets (1)
Order Information
Product | Status | Compliance | Package | MSL* | Container | Budgetary Price/Unit |
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2N5884G | Active | Pb-free | TO-204-2 | 1-07 | NA | Tray Foam | 100 | $2.0447 |
Specifications
Product | Polarity | Type | VCE(sat) Max (V) | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
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2N5884G | PNP | General Purpose | 1 | 25 | 80 | 20 | 100 | 4 | 200 |