2N5886: 25 A, 80 V NPN Bipolar Power Transistor

The Power 25A 80 V Bipolar NPN Transistor is designed for general-purpose power amplifier and switching applications.

Features
  • Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc
  • Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage
  • Excellent DC Current Gain hFE = 20 (min) at IC = 10 Adc
  • High Current Gain Bandwidth Product ft = 4.0 MHz (min) at IC = 1.0 Adc
  • Pb-Free Packages are Available
Packages
Simulation Models (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice Model2N5886.LIB (0.0kB)0
SPICE2 Model2N5886.SP2 (0.0kB)0
SPICE3 Model2N5886.SP3 (0.0kB)0
Saber Model2N5886.SIN (1.0kB)0
Package Drawings (1)
Document TitleDocument ID/SizeRevision
TO-204 (TO-3)1-07 (32kB)Z
Data Sheets (1)
Document TitleDocument ID/SizeRevisionRevision Date
Complementary Silicon High-Power Transistors2N5883/D (94.0kB)11
Order Information
ProductStatusCompliancePackageMSL*ContainerBudgetary Price/Unit
2N5886GActivePb-freeTO-204-21-07NATray Foam100$1.872
Specifications
ProductPolarityTypeVCE(sat) Max (V)IC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
2N5886GNPNGeneral Purpose12580201004200
Complementary Silicon High-Power Transistors (94.0kB) 2N5886
PSpice Model 2N5886
SPICE2 Model 2N5886
SPICE3 Model 2N5886
Saber Model 2N5886
TO-204 (TO-3) 2N6341