2N6111: 7.0 A, 30 V PNP Bipolar Power Transistor _ BDTIC a Leading Distributor in China

2N6111: 7.0 A, 30 V PNP Bipolar Power Transistor

The Power 7A 70 V Bipolar NPN Transistor is designed for use in general-purpose amplifier and switching applications.

Features

DC Current Gain Specified to 7.0 Amperes hFE = 30-150 @ IC hFE = 3.0 Adc 2N6111, 2N6288 hFE = 2.3 (Min) @ IC = 7.0 Adc - All Devices
Collector-Emitter Sustaining Voltage VCEO(sus) = 30 Vdc (Min) 2N6111, 2N6288 VCEO(sus) = 50 Vdc (Min) - 2N6109 VCEO(sus) = 70 Vdc (Min) - 2N6107, 2N6292
High Current Gain Bandwidth Product fT = 4.0 MHz (Min) @ IC = 500 mAdc 2N6288, 90, 92 fT = 10 MHz (Min) @ IC = 500 mAdc - 2N6107, 09, 11
TO-220AB Compact Package
Pb-Free Packages are Available

Packages

2N6111 Packages

Simulation Models (4)

Document Title	Document ID/Size	Revision	Revision Date
Pspice Model	2N6111.LIB (0.0kB)	0
Saber Model	2N6111.SIN (1.0kB)	0
Spice2 Model	2N6111.SP2 (0.0kB)	0
Sppice3 Model	2N6111.SP3 (0.0kB)	0

Package Drawings (1)

Document Title	Document ID/Size	Revision
TO-220 3 LEAD STANDARD	221A-09 (30.9kB)	AH

Data Sheets (1)

Document Title	Document ID/Size	Revision	Revision Date
Complementary Silicon Plastic Power Transistors	2N6107/D (106kB)	11	Nov, 2014

Order Information

Product	Status	Compliance	Package		MSL*	Container		Budgetary Price/Unit
2N6111G	Active	Pb-free	TO-220-3	221A-09	NA	Tube	50	$0.4973
2N6111	Last Shipments		TO-220-3	221A-09	NA	Tube	50

Specifications

Product	Polarity	Type	VCE(sat) Max (V)	IC Continuous (A)	V(BR)CEO Min (V)	hFE Min	hFE Max	fT Min (MHz)	PTM Max (W)
2N6111G	PNP	General Purpose	3.5	7	30	30	150	10	40

Complementary Silicon Plastic Power Transistors (106kB) 2N6292

Pspice Model 2N6111

Saber Model 2N6111

Spice2 Model 2N6111

Sppice3 Model 2N6111

TO-220 3 LEAD STANDARD NTP6412AN

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