2N6338: 25 A, 100 V High Power NPN Bipolar Power Transistor
The Power 25A 150 V Bipolar NPN Transistor is designed for use in industrial-military power amplifier and switching circuit applications.
Features- High Collector-Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) 2N6338 VCEO(sus) = 150 Vdc (Min) - 2N6341
- High DC Current Gain hFE = 30 - 120 @ IC = 10 AdchFE = 12 (Min) @ IC = 25 Adc
- Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
- Fast Switching Times @ IC = 10 Adc tr = 0.3 µs (Max) ts = 1.0 µs (Max) tf = 0.25 µs (Max)
- These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.
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Simulation Models (4)
Package Drawings (1)
Data Sheets (1)
Order Information
| Product | Status | Compliance | Package | MSL* | Container | Budgetary Price/Unit |
|---|
| 2N6338G | Active | Pb-free | TO-204-2 | 1-07 | NA | Tray Foam | 100 | $7.9198 |
Specifications
| Product | Polarity | Type | VCE(sat) Max (V) | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
|---|
| 2N6338G | NPN | General Purpose | 1 | 25 | 100 | 30 | 120 | 40 | 200 |
