BD159: 0.5 A, 350 V NPN Bipolar Power Transistor

This device is designed for power output stages for television, radio, phonograph and other consumer product applications.

特性
  • Suitable for Transformerless, Line-Operated Equipment
  • Thermopad+ Construction Provides High Power Dissipation Rating for HighReliability
  • Pb-Free Package is Available
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelBD159.LIB (0.0kB)0
Saber ModelBD159.SIN (1.0kB)0
Spice2 ModelBD159.SP2 (0.0kB)0
Spice3 ModelBD159.SP3 (0.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-22577-09 (31kB)AD
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Plastic Medium-Power Silicon NPN TransistorBD159/D (80kB)7DEC, 2013
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
BD159GActivePb-free Halide free0.5 A, 350 V NPN Bipolar Power TransistorTO-225-377-09NABulk Box500$0.2267
订购产品技术参数
ProductPolarityIC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
BD159GNPN0.535030240-20
Plastic Medium-Power Silicon NPN Transistor (80kB) BD159
PSpice Model BD159
Saber Model BD159
Spice2 Model BD159
Spice3 Model BD159
TO-225 2N5657