BD810: High Power PNP BipolarTransistor

The High Power NPN Bipolar Power Transistor is designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

特性
  • DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc
  • Pb-Free Packages are Available
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelBD810.LIB (0.0kB)0
Saber ModelBD810.SIN (1.0kB)0
Spice2 ModelBD810.SP2 (0.0kB)0
Spice3 ModelBD810.SP3 (0.0kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-220 3 LEAD STANDARD221A-09 (30.9kB)AH
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Plastic High Power Silicon TransistorBD809/D (89kB)8Nov, 2014
产品订购型号
产品状况Compliance具体说明封装MSL*容器预算价格 (1千个数量的单价)
BD810GActivePb-freeHigh Power PNP BipolarTransistorTO-220-3221A-09NATube50$0.5933
BD810Last ShipmentsHigh Power PNP BipolarTransistorTO-220-3221A-09NATube50
订购产品技术参数
ProductPolarityIC Continuous (A)V(BR)CEO Min (V)hFE MinhFE MaxfT Min (MHz)PTM Max (W)
BD810GPNP108030-1.590
Plastic High Power Silicon Transistor (89kB) BD810
PSpice Model BD810
Saber Model BD810
Spice2 Model BD810
Spice3 Model BD810
TO-220 3 LEAD STANDARD NTP6412AN