BUV22: 40 A, 250 V NPN Bipolar Power Transistor
The 40 A, 250V NPN Bipolar Power Transistor is designed for high speed, high current and high power applications.
特性- High DC current gain: HFE min. = 20 at IC = 10 A
- Low VCE(sat): VCE(sat) max. = 1.0 V at IC = 10 A
- Very fast switching times:TF max. = 0.35 ms at IC = 20 A
- Pb-Free Package is Available
|
仿真模型 (4)
封装图纸 (1)
Document Title | Document ID/Size | Revision |
---|
TO-204 (TO-3) | 197A-05 (3.2kB) | |
数据表 (1)
产品订购型号
产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价) |
---|
BUV22G | Active | Pb-free | 40 A, 250 V NPN Bipolar Power Transistor | TO-204-2 / TO-3-2 | 197A-05 | NA | Tray Foam | 100 | $5.9759 |
订购产品技术参数
Product | Polarity | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
---|
BUV22G | NPN | 40 | 250 | 20 | 60 | 8 | 250 |