CPH3356: Power MOSFET, -20V, 137mΩ, -2.5A, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This devices is suitable for applications with low gate charge driving or low on resistance requirements.
Features- 1.8V Drive
- Low On-Resistance
- ESD Diode - Protected Gate
- Pb-Free, Halogen Free and RoHS Compliance
| Benefits- Drive at low voltage
- Minimize conduction loss
- ESD resistance
- Environment friendliness
|
Applications | End Products- White goods, Game, Mobile Scanner, Recorder, Ink Jet Printer
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Data Sheets (1)
Package Drawings (1)
| Document Title | Document ID/Size | Revision |
|---|
| CPH3 | 318BA (47.7kB) | O |
Order Information
| Product | Status | Compliance | Package | MSL* | Container | Budgetary Price/Unit |
|---|
| CPH3356-TL-H | Active, Not Rec | Pb-free
Halide free | CPH-3 | 318BA | 1 | Tape and Reel | 3000 | $0.1253 |
| CPH3356-TL-W | Active | Pb-free
Halide free | CPH-3 | 318BA | 1 | Tape and Reel | 3000 | $0.116 |
Specifications
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| CPH3356-TL-W | P-Channel | Single | -20 | 10 | -1.4 | -2.5 | 1 | 203 | 137 | | 3.3 | | 0.72 | | 250 | 60 | 45 |
