ECH8315: Power MOSFET, -30V, 25mΩ, -7.5A, Single P-Channel

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to low on resistance. This devices is suitable for applications with low on resistance requirements.

Features
  • Low On-Resistance
  • ESD Diode-Protected Gate
  • Pb-Free, Halogen Free and RoHS compliance
  • 4.0V drive
Benefits
  • Improves Efficiency by Reducing Conduction Losses. Reduces Heat Dissipation
  • ESD Resistance
  • Environmental Consideration
Applications
  • Load Switch
  • Protection Switch for Lithium-ion Battery
  • Motor Driver
End Products
  • Digital Still Camera, Wireless speaker
  • Inkjet Printer, Fan Motor , LiB Charger
Simulation Models (1)
Document TitleDocument ID/SizeRevisionRevision Date
ECH8315 SPICE PARAMETERECH8315-SPICE/D (21kB)0Jun, 2014
Package Drawings (1)
Document TitleDocument ID/SizeRevision
SOT-28FL / ECH8318BF (50.5kB)O
Data Sheets (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power MOSFET, -30V, 25mOhm, -7.5A, Single P-ChannelECH8315/D (614kB)2Apr, 2015
Order Information
ProductStatusCompliancePackageMSL*ContainerBudgetary Price/Unit
ECH8315-TL-HActive, Not RecPb-free Halide freeSOT-28 FL / ECH-8318BF1Tape and Reel3000$0.236
ECH8315-TL-WActivePb-free Halide freeSOT-28 FL / ECH-8318BF1Tape and Reel3000$0.2
Specifications
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)RDS(on) Max @ VGS = 2.5 V (mΩ)RDS(on) Max @ VGS = 4.5 V (mΩ)RDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
ECH8315-TL-WP-ChannelSingle-3020-2.6-7.51.54425184.7875200150
Power MOSFET, -30V, 25mOhm, -7.5A, Single P-Channel (614kB) ECH8315
ECH8315 SPICE PARAMETER ECH8315
SOT-28FL / ECH8 ECH8697R