MBRAF1100: 1.0 A, 100 V Schottky Rectifier
The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
Features- Rectangular Package for Automated Handling
- Highly Stable Oxide Passivated Junction
- High Blocking Voltage - 100 V
- 150°C Operating Junction Temperature
- Guard-Ring for Stress Protection
- This is a Pb-Free DeviceMechanical Characteristics:
- Case: Epoxy, Molded
- Weight: 95 mg (approximately)
- Finish: All External Surfaces Corrosion Resistant and TerminalLeads are Readily Solderable
- Lead and Mounting Surface Temperature for Soldering Purposes:260°C Max. for 10 Seconds
- Shipped in 12 mm Tape and Reel, 5000 Units per Reel
- Cathode Polarity Band
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Simulation Models (4)
Package Drawings (1)
| Document Title | Document ID/Size | Revision |
|---|
| SMA-FL | 403AA (47.3kB) | O |
Data Sheets (1)
Order Information
| Product | Status | Compliance | Package | MSL* | Container | Budgetary Price/Unit |
|---|
| MBRAF1100T3G | Active | AEC Qualified
Pb-free
Halide free | SMA-FL | 403AA | 1 | Tape and Reel | 5000 | $0.122 |
Specifications
| Product | Configuration | VRRM Min (V) | VF Max (V) | IRM Max (µA) | IO(rec) Max (A) | IFSM Max (A) | trr Max (ns) | Cj Max (pF) |
|---|
| MBRAF1100T3G | Single | 100 | 0.75 | 500 | 1 | 50 | - | - |
